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嵌入等离子体波导中的纳米金刚石中单个锗空位的片上激发

On-chip excitation of single germanium vacancies in nanodiamonds embedded in plasmonic waveguides.

作者信息

Siampour Hamidreza, Kumar Shailesh, Davydov Valery A, Kulikova Liudmila F, Agafonov Viatcheslav N, Bozhevolnyi Sergey I

机构信息

1Centre for Nano Optics, University of Southern Denmark, Campusvej 55, Odense M, DK-5230 Denmark.

2L.F. Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow, 142190 Russia.

出版信息

Light Sci Appl. 2018 Sep 12;7:61. doi: 10.1038/s41377-018-0062-5. eCollection 2018.

DOI:10.1038/s41377-018-0062-5
PMID:30245809
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6134053/
Abstract

Monolithic integration of quantum emitters in nanoscale plasmonic circuitry requires low-loss plasmonic configurations capable of confining light well below the diffraction limit. We demonstrated on-chip remote excitation of nanodiamond-embedded single quantum emitters by plasmonic modes of dielectric ridges atop colloidal silver crystals. The nanodiamonds were produced to incorporate single germanium-vacancy (GeV) centres, providing bright, spectrally narrow and stable single-photon sources suitable for highly integrated circuits. Using electron-beam lithography with hydrogen silsesquioxane (HSQ) resist, dielectric-loaded surface plasmon polariton waveguides (DLSPPWs) were fabricated on single crystalline silver plates to contain those of deposited nanodiamonds that are found to feature appropriate single GeV centres. The low-loss plasmonic configuration enabled the 532-nm pump laser light to propagate on-chip in the DLSPPW and reach to an embedded nanodiamond where a single GeV centre was incorporated. The remote GeV emitter was thereby excited and coupled to spatially confined DLSPPW modes with an outstanding figure-of-merit of 180 due to a ~six-fold Purcell enhancement, ~56% coupling efficiency and ~33 μm transmission length, thereby opening new avenues for the implementation of nanoscale functional quantum devices.

摘要

将量子发射器单片集成到纳米级等离子体电路中,需要低损耗的等离子体结构,能够将光限制在远低于衍射极限的范围内。我们通过胶体银晶体顶部介电脊的等离子体模式,展示了对嵌入纳米金刚石的单量子发射器进行片上远程激发。制备的纳米金刚石包含单个锗空位(GeV)中心,提供了适用于高度集成电路的明亮、光谱窄且稳定的单光子源。使用电子束光刻技术和氢倍半硅氧烷(HSQ)抗蚀剂,在单晶银板上制造了加载电介质的表面等离子体激元极化子波导(DLSPPW),以容纳那些含有合适单GeV中心的沉积纳米金刚石。这种低损耗等离子体结构使532纳米泵浦激光能够在DLSPPW中在片上传播,并到达嵌入了单个GeV中心的纳米金刚石。由于约六倍的珀塞尔增强、约56% 的耦合效率和约33微米 的传输长度,远程GeV发射器因此被激发并耦合到空间受限的DLSPPW模式,其品质因数高达180,从而为实现纳米级功能量子器件开辟了新途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/f1bcdfc6a5d0/41377_2018_62_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/972820302069/41377_2018_62_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/c4a49dbd21fa/41377_2018_62_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/23a0262a49cd/41377_2018_62_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/6f804250fb6d/41377_2018_62_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/341d6d78b1f6/41377_2018_62_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/f1bcdfc6a5d0/41377_2018_62_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/972820302069/41377_2018_62_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/c4a49dbd21fa/41377_2018_62_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/23a0262a49cd/41377_2018_62_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/6f804250fb6d/41377_2018_62_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/341d6d78b1f6/41377_2018_62_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a69b/6134053/f1bcdfc6a5d0/41377_2018_62_Fig6_HTML.jpg

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