Marseglia L, Saha K, Ajoy A, Schröder T, Englund D, Jelezko F, Walsworth R, Pacheco J L, Perry D L, Bielejec E S, Cappellaro P
Opt Express. 2018 Jan 8;26(1):80-89. doi: 10.1364/OE.26.000080.
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV centers, targeted to fabricated nanowires. The co-localization of single SiV centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV creation method, enables a new class of devices for integrated photonics and quantum science.
许多量子技术的实际应用依赖于在室温下工作的稳健且明亮的单光子源的开发。金刚石中带负电荷的硅空位（SiV）色心是这种单光子源的一个可能候选者。然而，由于与空气的高折射率失配，金刚石中的色心通常表现出低光子外耦合。另一个缺点是由于金刚石样品中本征缺陷的随机定位。在这里，我们展示了将Si离子以高转换效率确定性地注入到单个SiV中心，目标是制造纳米线。单个SiV中心与纳米结构的共定位产生的光耦合效率比块状金刚石中的单个SiV中心高十倍。这种增强的光子外耦合，连同SiV产生方法的内在可扩展性，为集成光子学和量子科学带来了一类新的器件。
