Chen Chun-An, Chen Po-Han, Zheng Yu-Xiang, Chen Chiao-Han, Hsu Mong-Kai, Hsu Kai-Chieh, Lai Ying-Yu, Chuu Chih-Sung, Deng Hui, Lee Yi-Hsien
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2122, United States.
Nano Lett. 2024 Mar 20;24(11):3395-3403. doi: 10.1021/acs.nanolett.3c05155. Epub 2024 Feb 15.
Bright, scalable, and deterministic single-photon emission (SPE) is essential for quantum optics, nanophotonics, and optical information systems. Recently, SPE from hexagonal boron nitride (h-BN) has attracted intense interest because it is optically active and stable at room temperature. Here, we demonstrate a tunable quantum emitter array in h-BN at room temperature by integrating a wafer-scale plasmonic array. The transient voltage electrophoretic deposition (EPD) reaction is developed to effectively enhance the filling of single-crystal nanometals in the designed patterns without aggregation, which ensures the fabricated array for tunable performances of these single-photon emitters. An enhancement of ∼500% of the SPE intensity of the h-BN emitter array is observed with a radiative quantum efficiency of up to 20% and a saturated count rate of more than 4.5 × 10 counts/s. These results suggest the integrated h-BN-plasmonic array as a promising platform for scalable and controllable SPE photonics at room temperature.
明亮、可扩展且具有确定性的单光子发射（SPE）对于量子光学、纳米光子学和光学信息系统至关重要。最近，来自六方氮化硼（h-BN）的单光子发射因其在室温下具有光学活性和稳定性而引起了广泛关注。在此，我们通过集成晶圆级等离子体阵列，展示了一种在室温下h-BN中的可调谐量子发射器阵列。开发了瞬态电压电泳沉积（EPD）反应，以有效增强单晶纳米金属在设计图案中的填充而不发生聚集，这确保了所制备的阵列具有这些单光子发射器的可调谐性能。观察到h-BN发射器阵列的单光子发射强度增强了约500%，辐射量子效率高达20%，饱和计数率超过4.5×10计数/秒。这些结果表明，集成的h-BN-等离子体阵列是室温下用于可扩展和可控单光子发射光子学的有前途的平台。
