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全范德瓦尔斯层状异质结构界面处的近邻诱导可调谐磁序

Proximity-Induced Tunable Magnetic Order at the Interface of All-van der Waals-Layered Heterostructures.

作者信息

Choi Eun-Mi, Kim Taesoo, Cho Byeong Wook, Lee Young Hee

机构信息

Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.

Sungkyunkwan University, Suwon 16419, Republic of Korea.

出版信息

ACS Nano. 2023 Aug 22;17(16):15656-15665. doi: 10.1021/acsnano.3c02764. Epub 2023 Jul 31.

DOI:10.1021/acsnano.3c02764
PMID:37523780
Abstract

Spin-orbit coupling (SOC) plays a crucial role in controlling the spin-charge conversion efficiency, spin torque, and complex magnetic spin structures. In this study, we investigate the interplay between SOC and ferromagnetism in heterostructures of large-SOC and magnetic materials. We highlight the importance of the SOC-proximity effect on magnetic ordering in all-van der Waals-layered heterostructures, specifically FeGeTe(FGT)/monolayer WVSe ( = 0 and 0.05). By increasing the SOC strength, we demonstrate various magnetic orderings induced at the interface of the heterostructure, including spin-flop, spin-flip, and inverted magnetization. Moreover, we show a sharp magnetic switching from antiferromagnetic state to ferromagnetic state in FGT/WVSe, which is characteristic of the synthetic antiferromagnetic structure. This proof-of-concept result offers the possibility of interface-tailoring spintronics, including two-dimensional magnetoresistive random access memory toggle switching. Our findings provide insight into the design and development of next-generation spintronic devices by exploiting the interplay between SOC and magnetic ordering in all-van der Waals-layered heterostructures.

摘要

自旋轨道耦合(SOC)在控制自旋-电荷转换效率、自旋扭矩和复杂的磁自旋结构方面起着至关重要的作用。在本研究中,我们研究了大SOC材料与磁性材料异质结构中SOC与铁磁性之间的相互作用。我们强调了SOC近邻效应在全范德华层状异质结构(特别是FeGeTe(FGT)/单层WVSe( = 0和0.05))中对磁有序的重要性。通过增加SOC强度,我们展示了在异质结构界面处诱导的各种磁有序,包括自旋翻转、自旋反转和反向磁化。此外,我们在FGT/WVSe中展示了从反铁磁态到铁磁态的急剧磁开关,这是合成反铁磁结构的特征。这一概念验证结果为界面定制自旋电子学提供了可能性,包括二维磁阻随机存取存储器触发开关。我们的研究结果通过利用全范德华层状异质结构中SOC与磁有序之间的相互作用,为下一代自旋电子器件的设计和开发提供了见解。

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