Luke Kevin, Kharel Prashanta, Reimer Christian, He Lingyan, Loncar Marko, Zhang Mian
Opt Express. 2020 Aug 17;28(17):24452-24458. doi: 10.1364/OE.401959.
Thin-film lithium niobate (LN) photonic integrated circuits (PICs) could enable ultrahigh performance in electro-optic and nonlinear optical devices. To date, realizations have been limited to chip-scale proof-of-concepts. Here we demonstrate monolithic LN PICs fabricated on 4- and 6-inch wafers with deep ultraviolet lithography and show smooth and uniform etching, achieving 0.27 dB/cm optical propagation loss on wafer-scale. Our results show that LN PICs are fundamentally scalable and can be highly cost-effective.
薄膜铌酸锂（LN）光子集成电路（PIC）可实现电光和非线性光学器件的超高性能。迄今为止，相关实现仅限于芯片级概念验证。在此，我们展示了采用深紫外光刻技术在4英寸和6英寸晶圆上制造的单片LN PIC，并展示了平滑且均匀的蚀刻效果，在晶圆级实现了0.27 dB/cm的光传播损耗。我们的结果表明，LN PIC具有根本上的可扩展性且具有很高的成本效益。
