Fu JinTao, Que Longcheng, Jiang Hao, Luo Wei, Nie Changbin, Leng Chongqian, Luo Ying, Zhou Yun, Lv Jian, Zhou Dahua
Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, People's Republic of China. University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Nanotechnology. 2020 Nov 27;31(48):485201. doi: 10.1088/1361-6528/abb108.
The photoconductive detector based on a graphene-silicon heterostructure retains excellent optoelectrical properties, in which the graphene plays an indispensable role, acting as the carrier transporting channel. Herein, we systematically investigate by simulation and experiment how doping graphene will affect the performance of graphene-silicon hybrid photoconductors. Compared with lightly p-doped graphene devices, the responsivity can be made nine times better through increasing the p-type doping level. In addition, the net photocurrent can also be enhanced by about four times through increasing the n-type doping level of graphene. We attribute this improvement to the barrier height change adjusted by doping graphene, which can optimize the lifetime and transport of photocarriers. Such a graphene-doping method, that manipulates the junction region, could offer useful guidance for achieving high-performance graphene photodetectors.
基于石墨烯-硅异质结构的光电导探测器保留了优异的光电特性，其中石墨烯起着不可或缺的作用，充当载流子传输通道。在此，我们通过模拟和实验系统地研究了掺杂石墨烯如何影响石墨烯-硅混合光电导体的性能。与轻度p型掺杂的石墨烯器件相比，通过提高p型掺杂水平，响应度可提高九倍。此外，通过提高石墨烯的n型掺杂水平，净光电流也可增强约四倍。我们将这种改善归因于通过掺杂石墨烯调节的势垒高度变化，这可以优化光载流子的寿命和传输。这种操纵结区的石墨烯掺杂方法可为实现高性能石墨烯光电探测器提供有用的指导。
