Pham Van-Trung, Fang Te-Hua
Department of Mechanical Engineering, National Kaohsiung University of Science and Technology, Kaohsiung, 807, Taiwan.
Institute of Research and Development, Duy Tan University, Danang, 550000, Vietnam.
Sci Rep. 2020 Sep 15;10(1):15082. doi: 10.1038/s41598-020-72162-9.
We conduct molecular dynamics simulations to study the mechanical and thermal properties of monolayer indium selenide (InSe) sheets. The influences of temperature, intrinsic structural defect on the tensile properties were assessed by tensile strength, fracture strain, and Young's modulus. We found that the tensile strength, fracture strain, and Young's modulus reduce as increasing temperature. The results also indicate that with the existence of defects, the stress is concentrated at the region around the vacancy leading to the easier destruction. Therefore, the mechanical properties were considerably decreased with intrinsic structural defects. Moreover, Young's modulus is isotropy in both zigzag and armchair directions. The point defect almost has no influence on Young's modulus but it strongly influences the ultimate strength and fracture strain. Besides, the effects of temperature, length size, vacancy defect on thermal conductivity (κ) of monolayer InSe sheets were also studied by using none-equilibrium molecular dynamics simulations. The κ significantly arises as increasing the length of InSe sheets. The κ of monolayer InSe with infinite length at 300 K in armchair direction is 46.18 W/m K, while in zigzag direction is 45.87 W/m K. The difference of κ values in both directions is very small, indicating the isotropic properties in thermal conduction of this material. The κ decrease as increasing the temperature. The κ goes down with the number of atoms vacancy defect increases.
我们进行分子动力学模拟以研究单层硒化铟(InSe)片材的力学和热学性质。通过拉伸强度、断裂应变和杨氏模量评估温度、固有结构缺陷对拉伸性能的影响。我们发现,随着温度升高,拉伸强度、断裂应变和杨氏模量降低。结果还表明,存在缺陷时,应力集中在空位周围区域,导致更容易破坏。因此,固有结构缺陷会使力学性能大幅下降。此外,杨氏模量在锯齿形和扶手椅形方向上均表现为各向同性。点缺陷对杨氏模量几乎没有影响,但对极限强度和断裂应变有很大影响。此外,还通过非平衡分子动力学模拟研究了温度、长度尺寸、空位缺陷对单层InSe片材热导率(κ)的影响。随着InSe片材长度增加,κ显著增大。在300 K时,扶手椅形方向上无限长的单层InSe的κ为46.18 W/m·K,而在锯齿形方向上为45.87 W/m·K。两个方向上κ值的差异非常小,表明该材料在热传导方面具有各向同性。随着温度升高,κ降低。随着原子空位缺陷数量增加,κ下降。