Nissimagoudar Arun S, Ma Jinlong, Chen Yani, Li Wu
Institute for Advanced Study, Shenzhen University, Shenzhen 518060, People's Republic of China. Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China.
J Phys Condens Matter. 2017 Aug 23;29(33):335702. doi: 10.1088/1361-648X/aa7b63. Epub 2017 Jun 23.
Two-dimensional InSe, a recently synthesized semiconductor having a moderate band gap, has gained attention due to its ultra high mobility and high photo-responsivity. In this work, we calculate the lattice thermal conductivity (κ) of monolayer InSe by solving the phonon Boltzmann transport equation (BTE) with first-principles calculated inter atomic force constants. κ of monolayer InSe is isotropic and found to be around 27.6 W m [Formula: see text] at room temperature along the in-plane direction. The size dependence of κ shows the size effect can persist up to 20 μm. Further, κ can be reduced to half by tuning the sample size to 300 nm. This low value suggests that κ might be a limiting factor for emerging nanoelectronic applications of monolayer InSe.
二维InSe是一种最近合成的具有适度带隙的半导体，因其超高迁移率和高光响应性而受到关注。在这项工作中，我们通过求解具有第一性原理计算的原子间力常数的声子玻尔兹曼输运方程（BTE）来计算单层InSe的晶格热导率（κ）。单层InSe的κ是各向同性的，在室温下沿面内方向约为27.6 W m [公式：见正文]。κ的尺寸依赖性表明尺寸效应可以持续到20μm。此外，通过将样品尺寸调整到300nm，κ可以降低一半。这个低值表明κ可能是单层InSe新兴纳米电子应用的一个限制因素。
