Jiang Aihua, Shao Hongjuan, Zhu Liwen, Ma Songshan, Xiao Jianrong
College of Science, Guilin University of Technology, Guilin 541004, China.
School of Physics and Electronics, Central South University, Changsha 410083, China.
Materials (Basel). 2020 Sep 28;13(19):4325. doi: 10.3390/ma13194325.
TiO possesses a wide forbidden band of about 3.2 eV, which severely limits its visible light absorption efficiency. In this work, copper nitride (CuN) films were prepared by magnetron sputtering at different gas flow ratios. The structure of the films was tested by scanning electron microscope, X-ray diffractometer, and X-ray photoelectron spectroscope. Optical properties were investigated by UV-vis spectrophotometer and fluorescence spectrometer. Results show that the CuN crystal possesses a typical anti-ReO crystal structure, and the ratio of nitrogen and Cu atoms of the CuN films was adjusted by changing the gas flow ratio. The CuN films possess an optical band gap of about 2.0 eV and energy gap of about 2.5 eV and exhibit excellent photocatalytic activity for degrading methyl orange (degradation ratio of 99.5% in 30 min). The photocatalytic activity of CuN mainly originates from vacancies in the crystal and Cu self-doping. This work provides a route to broaden the forbidden band width of photocatalytic materials and increase their photoresponse range.
二氧化钛具有约3.2电子伏特的宽禁带，这严重限制了其可见光吸收效率。在这项工作中，通过磁控溅射在不同气体流量比下制备了氮化铜（CuN）薄膜。通过扫描电子显微镜、X射线衍射仪和X射线光电子能谱仪对薄膜结构进行了测试。通过紫外可见分光光度计和荧光光谱仪研究了光学性质。结果表明，CuN晶体具有典型的反ReO晶体结构，通过改变气体流量比来调节CuN薄膜中氮和铜原子的比例。CuN薄膜具有约2.0电子伏特的光学带隙和约2.5电子伏特的能隙，并对降解甲基橙表现出优异的光催化活性（30分钟内降解率为99.5%）。CuN的光催化活性主要源于晶体中的空位和铜的自掺杂。这项工作提供了一种拓宽光催化材料禁带宽度并增加其光响应范围的途径。
