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一种用于神经记录应用的高效低噪声高摆幅CMOS放大器。

A Power Efficient Low-noise and High Swing CMOS Amplifier for Neural Recording Applications.

作者信息

Naderi Kebria, Shad Erwin, Molinas Marta, Heidari Ali

出版信息

Annu Int Conf IEEE Eng Med Biol Soc. 2020 Jul;2020:4298-4301. doi: 10.1109/EMBC44109.2020.9175842.

DOI:10.1109/EMBC44109.2020.9175842
PMID:33018946
Abstract

In this paper, a power efficient, low-noise and high swing capacitively-coupled amplifier (CCA) for neural recording applications is proposed. The use of current splitting technique and current scaling technique in a current mirror operational transconductance amplifier (CM-OTA) has lead to a very good trade-off between power and noise. The presented architecture is simple, without cascode transistor while it has more than 80 dB open-loop gain without extra power consumption. As a result, the proposed structure has a better power efficiency factor (PEF) and output swing in comparison with previous reported architectures is increased to the 2Vov below the maximum supply voltage. In order to reduce flicker noise and achieve better trade-off between the power and noise, PMOS transistors with an optimum size have been utilized which operate in sub-threshold region. The amplifier is designed and simulated in a commercially available 0.18 μm CMOS technology. Monte Carlo simulations for process and mismatch have been carried out. The gain of the proposed amplifier is 39.22 dB in its bandwidth (3 Hz - 5 kHz). Total input-referred noise is 3.03 μVrms over 1 Hz - 10 kHz. The power consumption of the amplifier is 2.98 μW at supply voltage of 1.4 V. The noise efficiency factor (NEF) and PEF are 2.4 and 8.06, respectively. The output swing is about 1.16 V. It means the proposed amplifier can tolerate up to 13.2 mV peak-to-peak input signal while its total harmonic distortion (THD) is less than 1%.

摘要

本文提出了一种用于神经记录应用的高效、低噪声和高摆幅电容耦合放大器(CCA)。在电流镜运算跨导放大器(CM-OTA)中使用电流分裂技术和电流缩放技术,在功耗和噪声之间实现了很好的权衡。所提出的架构简单,没有共源共栅晶体管,同时在不消耗额外功率的情况下具有超过80 dB的开环增益。因此,与先前报道的架构相比,所提出的结构具有更好的功率效率因子(PEF),并且输出摆幅增加到比最大电源电压低2Vov。为了降低闪烁噪声并在功率和噪声之间实现更好的权衡,采用了具有最佳尺寸的PMOS晶体管,其工作在亚阈值区域。该放大器采用商用0.18μm CMOS技术进行设计和仿真。对工艺和失配进行了蒙特卡罗仿真。所提出放大器在其带宽(3 Hz - 5 kHz)内的增益为39.22 dB。在1 Hz - 10 kHz范围内,总输入参考噪声为3.03 μVrms。在1.4 V电源电压下,放大器的功耗为2.98 μW。噪声效率因子(NEF)和PEF分别为2.4和8.06。输出摆幅约为1.16 V。这意味着所提出的放大器能够容忍高达13.2 mV峰峰值的输入信号,同时其总谐波失真(THD)小于1%。

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