用于气体传感器的掺杂氧化锌纳米结构的进展

Advances in Doped ZnO Nanostructures for Gas Sensor.

作者信息

Wang Chao-Nan, Li Yu-Liang, Gong Fei-Long, Zhang Yong-Hui, Fang Shao-Ming, Zhang Hao-Li

机构信息

College of Materials and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, 450002, P. R. China.

State Key Laboratory of Applied Organic Chemistry (SKLAOC), Key Laboratory of Special Function Materials and Structure Design (MOE), College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, P. R. China.

出版信息

Chem Rec. 2020 Dec;20(12):1553-1567. doi: 10.1002/tcr.202000088. Epub 2020 Oct 5.

DOI:10.1002/tcr.202000088

PMID:33021040

Abstract

Gas sensors based on metal oxides semiconductor (MOS) have attracted extensive attention from both academic and industry. ZnO, as a typical MOS, exhibits potential applications in toxic gas detection, owning to its wide band gap, n-type transport characteristic and excellent electrical performance. Meanwhile, doping is an effective way to improve the sensing performance of ZnO materials. In this review, the effects of different types of doping on morphology, crystal structure, band gap and depletion layer of ZnO materials are comprehensively discussed. Theoretical analysis on the strategies for enhancing the sensing properties of ZnO is also provided. This review puts forward the reasonable insight for designing efficient n-type ZnO-based semiconductor oxide sensing materials.

摘要

基于金属氧化物半导体（MOS）的气体传感器已引起学术界和工业界的广泛关注。氧化锌（ZnO）作为一种典型的MOS，由于其宽带隙、n型传输特性和优异的电学性能，在有毒气体检测中展现出潜在的应用价值。同时，掺杂是提高ZnO材料传感性能的有效方法。在这篇综述中，全面讨论了不同类型的掺杂对ZnO材料的形貌、晶体结构、带隙和耗尽层的影响。还提供了关于增强ZnO传感性能策略的理论分析。这篇综述为设计高效的基于n型ZnO的半导体氧化物传感材料提出了合理的见解。