氯离子对铜填充硅通孔微观结构的影响
Effect of Chloride on Microstructure in Cu Filled Microscale Through Silicon Vias.
作者信息
Kim S-H, Lee H-J, Braun T M, Moffat T P, Josell D
机构信息
Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, South Korea.
Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
出版信息
J Electrochem Soc. 2021;168(11). doi: 10.1149/1945-7111/ac2bea.
The microstructure of copper filled through silicon vias deposited in a CuSO + HSO electrolyte containing micromolar concentrations of deposition rate suppressing poloxamine and chloride additives is explored using electron backscatter diffraction. Regions with distinct microstructures are observed in the vias, including conformal deposition and seam formation localized adjacent to the bottom that can transition to bottom-up filling higher in the features. The presence and extent of each microstructure depends on applied potential as well as additive concentration. Deposition in the presence of higher chloride concentration yields a strong (110) growth texture in regions where bottom-up filling exhibits a horizontal growth front profile while (110) textured or untextured growth is observed for different conditions where upward growth proceeds with a v-notch profile.
使用电子背散射衍射技术研究了在含有微摩尔浓度的沉积速率抑制添加剂泊洛沙姆和氯化物的硫酸铜+硫酸电解液中通过硅通孔填充的铜的微观结构。在通孔中观察到具有不同微观结构的区域，包括保形沉积和底部附近局部形成的接缝，这些接缝在特征较高处可转变为自底向上填充。每种微观结构的存在和程度取决于施加的电位以及添加剂浓度。在较高氯化物浓度存在下的沉积，在自底向上填充呈现水平生长前沿轮廓的区域中产生强烈的(110)生长织构，而在不同条件下向上生长以V形缺口轮廓进行时，则观察到(110)织构或无织构生长。
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