• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

采用脉宽调制方案的基于与非闪存架构的神经形态计算

Neuromorphic Computing Using NAND Flash Memory Architecture With Pulse Width Modulation Scheme.

作者信息

Lee Sung-Tae, Lee Jong-Ho

机构信息

Department of Electrical and Computer Engineering, ISRC, Seoul National University, Seoul, South Korea.

出版信息

Front Neurosci. 2020 Sep 18;14:571292. doi: 10.3389/fnins.2020.571292. eCollection 2020.

DOI:10.3389/fnins.2020.571292
PMID:33071744
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7530297/
Abstract

A novel operation scheme is proposed for high-density and highly robust neuromorphic computing based on NAND flash memory architecture. Analog input is represented with time-encoded input pulse by pulse width modulation (PWM) circuit, and 4-bit synaptic weight is represented with adjustable conductance of NAND cells. Pulse width modulation scheme for analog input value and proposed operation scheme is suitably applicable to the conventional NAND flash architecture to implement a neuromorphic system without additional change of memory architecture. Saturated current-voltage characteristic of NAND cells eliminates the effect of serial resistance of adjacent cells where a pass bias is applied in a synaptic string and IR drop of metal wire resistance. Multiply-accumulate (MAC) operation of 4-bit weight and width-modulated input can be performed in a single input step without additional logic operation. Furthermore, the effect of quantization training (QT) on the classification accuracy is investigated compared with post-training quantization (PTQ) with 4-bit weight. Lastly, a sufficiently low current variance of NAND cells obtained by the read-verify-write (RVW) scheme achieves satisfying accuracies of 98.14 and 89.6% for the MNIST and CIFAR10 images, respectively.

摘要

提出了一种基于与非闪存架构的用于高密度和高鲁棒性神经形态计算的新型操作方案。模拟输入由脉宽调制(PWM)电路通过时间编码输入脉冲来表示,4位突触权重由与非单元的可调电导来表示。模拟输入值的脉宽调制方案和所提出的操作方案适用于传统与非闪存架构,以实现神经形态系统,而无需对存储器架构进行额外更改。与非单元的饱和电流 - 电压特性消除了在突触串中施加通过偏置时相邻单元的串联电阻以及金属线电阻的IR降的影响。4位权重和宽度调制输入的乘加(MAC)操作可以在单个输入步骤中执行,无需额外的逻辑操作。此外,与具有4位权重的训练后量化(PTQ)相比,研究了量化训练(QT)对分类精度的影响。最后,通过读 - 验证 - 写(RVW)方案获得的与非单元足够低的电流方差分别为MNIST和CIFAR10图像实现了98.14%和89.6%的令人满意的准确率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/89d5ec3ee4c2/fnins-14-571292-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/45eb4d796fe9/fnins-14-571292-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/a74ffa139b61/fnins-14-571292-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/c3073e075a3f/fnins-14-571292-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/a51e2d9d6b4f/fnins-14-571292-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/74054b80ed5b/fnins-14-571292-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/b37ed561406a/fnins-14-571292-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/6570ddfecb6d/fnins-14-571292-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/a9d1f1df4ded/fnins-14-571292-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/171fc48b4a3e/fnins-14-571292-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/f3a454a3aa8e/fnins-14-571292-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/b92a3fe540b8/fnins-14-571292-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/89d5ec3ee4c2/fnins-14-571292-g012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/45eb4d796fe9/fnins-14-571292-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/a74ffa139b61/fnins-14-571292-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/c3073e075a3f/fnins-14-571292-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/a51e2d9d6b4f/fnins-14-571292-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/74054b80ed5b/fnins-14-571292-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/b37ed561406a/fnins-14-571292-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/6570ddfecb6d/fnins-14-571292-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/a9d1f1df4ded/fnins-14-571292-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/171fc48b4a3e/fnins-14-571292-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/f3a454a3aa8e/fnins-14-571292-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/b92a3fe540b8/fnins-14-571292-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/423f/7530297/89d5ec3ee4c2/fnins-14-571292-g012.jpg

相似文献

1
Neuromorphic Computing Using NAND Flash Memory Architecture With Pulse Width Modulation Scheme.采用脉宽调制方案的基于与非闪存架构的神经形态计算
Front Neurosci. 2020 Sep 18;14:571292. doi: 10.3389/fnins.2020.571292. eCollection 2020.
2
Review of neuromorphic computing based on NAND flash memory.基于与非闪存的神经形态计算综述。
Nanoscale Horiz. 2024 Aug 19;9(9):1475-1492. doi: 10.1039/d3nh00532a.
3
Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells.基于 NAND 闪存单元的多层神经网络的字线偏置对多电平电导台阶线性度的影响。
J Nanosci Nanotechnol. 2020 Jul 1;20(7):4138-4142. doi: 10.1166/jnn.2020.17791.
4
3-bit multilevel operation with accurate programming scheme in TiO/AlOmemristor crossbar array for quantized neuromorphic system.用于量化神经形态系统的TiO/AlO忆阻器交叉阵列中具有精确编程方案的3位多级操作。
Nanotechnology. 2021 Apr 30;32(29). doi: 10.1088/1361-6528/abf0cc.
5
Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory.用于MLC NAND闪存的人工神经网络辅助错误纠正
Micromachines (Basel). 2021 Jul 27;12(8):879. doi: 10.3390/mi12080879.
6
Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing.用于神经形态计算的具有电荷陷阱型NAND闪存结构的忆阻器交叉阵列
Adv Sci (Weinh). 2023 Nov;10(32):e2303817. doi: 10.1002/advs.202303817. Epub 2023 Sep 26.
7
3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage.基于具有高密度多级存储的双层非晶硅纳米晶硅浮栅的3D NAND闪存。
Nanomaterials (Basel). 2022 Jul 18;12(14):2459. doi: 10.3390/nano12142459.
8
Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference.用于超越推理的神经形态计算的介电工程高速、低功耗、高可靠的基于电荷陷阱闪存的突触器件。
Nano Lett. 2023 Jan 25;23(2):451-461. doi: 10.1021/acs.nanolett.2c03453. Epub 2023 Jan 13.
9
Channel Modeling and Quantization Design for 3D NAND Flash Memory.用于3D NAND闪存的通道建模与量化设计
Entropy (Basel). 2023 Jun 21;25(7):965. doi: 10.3390/e25070965.
10
On-Chip Training Spiking Neural Networks Using Approximated Backpropagation With Analog Synaptic Devices.使用带有模拟突触器件的近似反向传播的片上训练脉冲神经网络。
Front Neurosci. 2020 Jul 7;14:423. doi: 10.3389/fnins.2020.00423. eCollection 2020.

引用本文的文献

1
Ferroelectric NAND for efficient hardware bayesian neural networks.用于高效硬件贝叶斯神经网络的铁电与非门
Nat Commun. 2025 Jul 25;16(1):6879. doi: 10.1038/s41467-025-61980-y.
2
Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND Flash.用于3D-NAND闪存中神经网络实现的字线输入偏置方案
Biomimetics (Basel). 2025 May 15;10(5):318. doi: 10.3390/biomimetics10050318.
3
Neuromorphic algorithms for brain implants: a review.用于脑植入物的神经形态算法:综述

本文引用的文献

1
Pruning for Hardware-Based Deep Spiking Neural Networks Using Gated Schottky Diode as Synaptic Devices.基于门控肖特基二极管的硬件深度尖峰神经网络修剪。
J Nanosci Nanotechnol. 2020 Nov 1;20(11):6603-6608. doi: 10.1166/jnn.2020.18772.
2
Regularization of deep neural networks with spectral dropout.带谱随机失活的深度神经网络正则化。
Neural Netw. 2019 Feb;110:82-90. doi: 10.1016/j.neunet.2018.09.009. Epub 2018 Oct 16.
3
Silicon synaptic transistor for hardware-based spiking neural network and neuromorphic system.基于硅基突触晶体管的脉冲神经网络和神经形态系统
Front Neurosci. 2025 Apr 11;19:1570104. doi: 10.3389/fnins.2025.1570104. eCollection 2025.
4
Flash Memory for Synaptic Plasticity in Neuromorphic Computing: A Review.用于神经形态计算中突触可塑性的闪存:综述
Biomimetics (Basel). 2025 Feb 18;10(2):121. doi: 10.3390/biomimetics10020121.
5
A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effects.对先进趋势的全面综述:从人工突触到考虑非理想效应的神经形态系统。
Front Neurosci. 2024 Apr 10;18:1279708. doi: 10.3389/fnins.2024.1279708. eCollection 2024.
6
3D Neuromorphic Hardware with Single Thin-Film Transistor Synapses Over Single Thin-Body Transistor Neurons by Monolithic Vertical Integration.通过单片垂直集成在单个薄体晶体管神经元上实现具有单个薄膜晶体管突触的3D神经形态硬件。
Adv Sci (Weinh). 2023 Oct;10(30):e2302380. doi: 10.1002/advs.202302380. Epub 2023 Sep 15.
7
Investigation of Deep Spiking Neural Networks Utilizing Gated Schottky Diode as Synaptic Devices.利用肖特基二极管作为突触器件对深度脉冲神经网络的研究。
Micromachines (Basel). 2022 Oct 22;13(11):1800. doi: 10.3390/mi13111800.
8
Memory-inspired spiking hyperdimensional network for robust online learning.受记忆启发的尖峰超维网络,用于稳健的在线学习。
Sci Rep. 2022 May 10;12(1):7641. doi: 10.1038/s41598-022-11073-3.
9
Parallel Training of Analog Neural Network Using Electrochemical Random-Access Memory.基于电化学随机存取存储器的模拟神经网络并行训练
Front Neurosci. 2021 Apr 8;15:636127. doi: 10.3389/fnins.2021.636127. eCollection 2021.
Nanotechnology. 2017 Oct 6;28(40):405202. doi: 10.1088/1361-6528/aa86f8. Epub 2017 Aug 18.