Moreno-López Juan Carlos, Fedi Filippo, Argentero Giacomo, Carini Marco, Chimborazo Johnny, Meyer Jannik, Pichler Thomas, Mateo-Alonso Aurelio, Ayala Paola
Faculty of Physics, University of Vienna, 1090 Wien, Austria.
POLYMAT, University of the Basque Country UPV/EHU, Avenida de Tolosa 72, E-20018 Donostia-San Sebastian, Spain.
J Phys Chem C Nanomater Interfaces. 2020 Oct 8;124(40):22150-22157. doi: 10.1021/acs.jpcc.0c06415. Epub 2020 Aug 31.
The synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with ∼2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (CHN).
本文介绍了在氧化铜上合成原子级平整的氮掺杂石墨烯的方法。该方法不仅避免了几乎所有用于生长的金属衬底,还能直接与衬底解耦,制备出具有约2.0原子百分比氮的替代构型石墨烯。角分辨光电子能谱显示出线性的能量-动量色散,其中狄拉克点位于费米能级。此外,通过使用特制的分子前驱体:二氰基吡唑菲咯啉(CHN),可以在sp替代构型中选择性地定制氮功能中心。