National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565, Japan.
Department of Electrical Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Nano Lett. 2015 Nov 11;15(11):7408-13. doi: 10.1021/acs.nanolett.5b02831. Epub 2015 Oct 26.
High density and controllable nitrogen doping in graphene is a critical issue to realize high performance graphene-based devices. In this paper, we demonstrate an efficient method to selectively produce graphitic-N and pyridinic-N defects in graphene by using the mixture plasma of ozone and nitrogen. The atomic structure, electronic structure, and dynamic behavior of these nitrogen defects are systematically studied at the atomic level by using a scanning transmission electron microscopy. The pyridinic-N exhibits higher chemical activity and tends to trap a series of transition metal atoms (Mg, Al, Ca, Ti, Cr, Mn, and Fe) as individual atoms.
在石墨烯中实现高密度且可控的氮掺杂是实现高性能基于石墨烯器件的关键问题。在本文中，我们展示了一种通过臭氧和氮气混合等离子体来选择性地在石墨烯中产生石墨-N 和吡啶-N 缺陷的有效方法。通过扫描透射电子显微镜，在原子水平上系统地研究了这些氮缺陷的原子结构、电子结构和动态行为。吡啶-N 表现出更高的化学活性，倾向于捕获一系列过渡金属原子（Mg、Al、Ca、Ti、Cr、Mn 和 Fe）作为单个原子。
