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采用与ASIC兼容的0.18μm CMOS工艺实现的多功能微机电系统

Multi-Function Microelectromechanical Systems Implementation with an ASIC Compatible CMOS 0.18 μm Process.

作者信息

Lin Chih-Hsuan, Song Chao-Hung, Wen Kuei-Ann

机构信息

Department of Electronic Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.

出版信息

Micromachines (Basel). 2021 Mar 17;12(3):314. doi: 10.3390/mi12030314.

DOI:10.3390/mi12030314
PMID:33803035
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8002977/
Abstract

A multi-function microelectromechanical system (MEMS) with a three-axis magnetometer (MAG) and three-axis accelerometer (ACC) function was implemented with an application-specific integrated circuit (ASIC)-compatible complementary metal-oxide-semiconductor (CMOS) 0.18 μm process. The readout circuit used the nested chopper, correlated double-sampling (CDS), noise reduction method; the frequency division multiplexing method; the time-division multiplexing method; and the calibration method. Sensing was performed by exciting the MEMS three-axis magnetometer at // axes mechanical resonant frequencies of 3.77/7.05/7.47 kHz, respectively. A modest die-level vacuum packaging resulted in in-plane and out-of-plane mechanical quality factors of 471-500 and 971-1000, respectively. The sensitivities of both the three-axis magnetometer with 2 mA driving current and the three-axis accelerometer were 7.1-10.7 uV/uT and 58.37-88.87 uV/ug. The resolutions of both the three-axis magnetometer with 2 mA driving current and three-axis accelerometer resolution were 44.06-87.46 nT/√Hz and 5.043-7.5 ng/√Hz. The resolution was limited by circuit noise equivalent acceleration (CNEM) and Brownian noise equivalent magnetic field (BNEM).

摘要

采用与专用集成电路（ASIC）兼容的0.18μm互补金属氧化物半导体（CMOS）工艺，实现了一种具有三轴磁力计（MAG）和三轴加速度计（ACC）功能的多功能微机电系统（MEMS）。读出电路采用了嵌套斩波器、相关双采样（CDS）降噪方法、分频复用方法、时分复用方法以及校准方法。通过分别在3.77/7.05/7.47kHz的//轴机械共振频率下激励MEMS三轴磁力计来进行传感。适度的芯片级真空封装分别导致面内和面外机械品质因数为471 - 500和971 - 1000。驱动电流为2mA时，三轴磁力计和三轴加速度计的灵敏度分别为7.1 - 10.7μV/μT和58.37 - 88.87μV/μg。驱动电流为2mA时，三轴磁力计和三轴加速度计的分辨率分别为44.06 - 87.46nT/√Hz和5.043 - 7.5ng/√Hz。分辨率受电路噪声等效加速度（CNEM）和布朗噪声等效磁场（BNEM）限制。

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