Shalabny Awad, Buonocore Francesco, Celino Massimo, Shalev Gil, Zhang Lu, Wu Weiwei, Li Peixian, Arbiol Jordi, Bashouti Muhammad Y
Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, J. Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Midreshset Ben-Gurion, Building 26, Beer-Sheva 8499000, Israel.
ENEA, C. R. Casaccia, via Anguillarese 301, 00123 Rome, Italy.
Nano Lett. 2020 Nov 11;20(11):8369-8374. doi: 10.1021/acs.nanolett.0c03543. Epub 2020 Oct 26.
The surface of nanowires is a source of interest mainly for electrical prospects. Thus, different surface chemical treatments were carried out to develop recipes to control the surface effect. In this work, we succeed in shifting and tuning the semiconductivity of a Si nanowire-based device from n- to p-type. This was accomplished by generating a hole transport layer at the surface by using an electrochemical reaction-based nonequilibrium position to enhance the impact of the surface charge transfer. This was completed by applying different annealing pulses at low temperature (below 400 °C) to reserve the hydrogen bonds at the surface. After each annealing pulse, the surface was characterized by XPS, Kelvin probe measurements, and conductivity measured by FET based on a single Si NW. The mechanism and conclusion were supported experimentally and theoretically. To this end, this strategy has been demonstrated as an essential tool which could pave a new road for regulating semiconductivity and for other low-dimensional nanomaterials.
纳米线的表面主要因其电学前景而备受关注。因此，开展了不同的表面化学处理以开发控制表面效应的方法。在这项工作中，我们成功地将基于硅纳米线的器件的半导体性从n型转变为p型。这是通过利用基于电化学反应的非平衡位置在表面生成空穴传输层来增强表面电荷转移的影响而实现的。这通过在低温（低于400°C）下施加不同的退火脉冲以保留表面的氢键来完成。每次退火脉冲后，通过X射线光电子能谱（XPS）、开尔文探针测量以及基于单个硅纳米线的场效应晶体管（FET）测量电导率对表面进行表征。该机制和结论得到了实验和理论的支持。为此，该策略已被证明是一种重要工具，可为调节半导体性及其他低维纳米材料开辟一条新道路。
