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通过沉积磷灰石核赋予超高分子量聚乙烯形成羟基磷灰石的能力。

Impartation of hydroxyapatite formation ability to ultra-high molecular weight polyethylene by deposition of apatite nuclei.

机构信息

Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan.

出版信息

IET Nanobiotechnol. 2020 Oct;14(8):673-679. doi: 10.1049/iet-nbt.2020.0050.

Abstract

The authors aimed to impart hydroxyapatite formation ability to ultra-high molecular weight polyethylene (UHMWPE) by deposition of apatite nuclei (ApN) by the following two methods. The first method was electrophoretic deposition (EPD). A porous UHMWPE was placed between electrodes in the ApN-dispersed ethanol and constant voltage was applied. By this treatment, the ApN were migrated from anode-side surface to the cathode one through the pores by an electric field in the pores of the UHMWPE and deposited inside the pores. The second method was direct precipitation (DP) of the ApN. A porous UHMWPE was soaked in a simulated body fluid (1.0SBF) with higher pH than the physiological one and subsequently, its temperature was raised. By this treatment, the ApN were precipitated in the pores of the UHMWPE directly in the reaction solution. For both methods, the ApN-deposited UHMWPE showed HAp formation ability not only on the top surface but also inside the pores near the surface of the porous UHMWPE in 1.0SBF although the adhesion strength of thus-formed HAp layer was higher in the case of the EPD in comparison with the DP, oxygen plasma treatment before the DP enabled to achieve a similar level of the HAp layer adhesion to the EPD.

摘要

作者旨在通过以下两种方法在超高分子量聚乙烯(UHMWPE)上沉积磷灰石核(ApN)来赋予其羟基磷灰石形成能力。第一种方法是电泳沉积(EPD)。将多孔 UHMWPE 放置在分散有 ApN 的乙醇中的两个电极之间,并施加恒定电压。通过这种处理,ApN 通过电场从阳极侧表面迁移到 UHMWPE 的孔中的阴极一侧,并在孔内沉积。第二种方法是 ApN 的直接沉淀(DP)。将多孔 UHMWPE 浸泡在 pH 值高于生理值的模拟体液(1.0SBF)中,随后升高其温度。通过这种处理,ApN 在反应溶液中直接在 UHMWPE 的孔内沉淀。对于这两种方法,在 1.0SBF 中,无论是在多孔 UHMWPE 的表面附近的孔内还是在其顶部表面,沉积 ApN 的 UHMWPE 均显示出形成 HAp 的能力,尽管与 DP 相比,EPD 形成的 HAp 层的附着力更高,但在 DP 之前进行氧等离子体处理可以使 HAp 层的附着力达到与 EPD 相似的水平。

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