Li Dingwei, Zhao Momo, Liang Kun, Ren Huihui, Wu Quantan, Wang Hong, Zhu Bowen
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China.
Nanoscale. 2020 Nov 5;12(42):21610-21616. doi: 10.1039/d0nr06177h.
Source-gated transistors (SGTs) with Schottky barriers have emerged as extraordinary candidates for constructing low-power electronics by virtue of device simplicity, high gain, and low operation voltages. In this work, we demonstrate flexible low-power SGTs with solution processed In2O3 channels and Al2O3 gate dielectrics on ultrathin polymer substrates, exhibiting light area density (0.56 mg cm-2), low subthreshold swing (102 mV dec-1), low operation voltage (<2 V), fast saturation behaviors (0.2 V), and low power consumption (46.3 μW cm-2). These achievements pave the way for employing the unconventional SGTs in wearable applications where low-power dissipation and high mechanical flexibility are essential.
具有肖特基势垒的源极栅控晶体管（SGT）凭借其器件结构简单、增益高和工作电压低等优点，已成为构建低功耗电子器件的卓越候选者。在这项工作中，我们展示了在超薄聚合物衬底上采用溶液处理的In2O3沟道和Al2O3栅极电介质的柔性低功耗SGT，其具有轻面积密度（0.56 mg cm-2）、低亚阈值摆幅（102 mV dec-1）、低工作电压（<2 V）、快速饱和特性（0.2 V）和低功耗（46.3 μW cm-2）。这些成果为在低功耗和高机械柔韧性至关重要的可穿戴应用中采用非常规SGT铺平了道路。
