Shen Weihong, Du Jiangbing, Xiong Junjie, Ma Lin, He Zuyuan
Opt Express. 2020 Oct 26;28(22):33254-33262. doi: 10.1364/OE.408700.
In this work, a silicon-integrated edge coupler supporting dual-mode fiber-to-chip coupling was designed and fabricated on 220-nm-thick SOI wafer with standard CMOS-compatible fabrication process. The proposed low-complexity structure consists of a multimode interference and triple-tip inverse taper. Both LP and LP modes in the few mode fiber (FMF) can be stimulated simultaneously by the edge coupler from TE and TE modes in silicon waveguide. Such a design is compatible with broadband wavelength division multiplexing and can be scaled up to 4-polarization-mode coupling as well. Using the proposed edge coupler, 2×100-Gbps/lambda PAM4 multimode interface through dual-mode fiber was demonstrated successfully.
在这项工作中，采用标准CMOS兼容制造工艺，在220纳米厚的SOI晶圆上设计并制造了一种支持双模光纤到芯片耦合的硅集成边缘耦合器。所提出的低复杂度结构由多模干涉和三尖端反向锥组成。边缘耦合器可以同时从硅波导中的TE和TE模式激发少模光纤（FMF）中的LP和LP模式。这种设计与宽带波分复用兼容，并且也可以扩展到4偏振模式耦合。使用所提出的边缘耦合器，成功演示了通过双模光纤的2×100 Gbps/波长PAM4多模接口。
