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绝缘体上硅光子集成电路的基本结构。

Basic structures for photonic integrated circuits in Silicon-on-insulator.

作者信息

Bogaerts W, Taillaert D, Luyssaert B, Dumon P, Van Campenhout J, Bienstman P, Van Thourhout D, Baets R, Wiaux V, Beckx S

出版信息

Opt Express. 2004 Apr 19;12(8):1583-91. doi: 10.1364/opex.12.001583.

Abstract

For the compact integration of photonic circuits, wavelength-scale structures with a high index contrast are a key requirement. We developed a fabrication process for these nanophotonic structures in Silicon-on-insulator using CMOS processing techniques based on deep UV lithography. We have fabricated both photonic wires and photonic crystal waveguides and show that, with the same fabrication technique, photonic wires have much less propagation loss than photonic crystal waveguides. Measurements show losses of 0.24dB/mm for photonic wires, and 7.5dB/mm for photonic crystal waveguides. To tackle the coupling to fiber, we studied and fabricated vertical fiber couplers with coupling efficiencies of over 21%. In addition, we demonstrate integrated compact spot-size converters with a mode-to-mode coupling efficiency of over 70%.

摘要

对于光子电路的紧凑集成,具有高折射率对比度的波长尺度结构是一项关键要求。我们基于深紫外光刻技术,利用CMOS工艺开发了一种在绝缘体上硅中制造这些纳米光子结构的工艺。我们已经制造了光子线和光子晶体波导,并表明,采用相同的制造技术,光子线的传播损耗比光子晶体波导小得多。测量结果显示,光子线的损耗为0.24dB/mm,光子晶体波导的损耗为7.5dB/mm。为了解决与光纤的耦合问题,我们研究并制造了耦合效率超过21%的垂直光纤耦合器。此外,我们还展示了模式间耦合效率超过70%的集成紧凑型光斑尺寸转换器。

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