Shen Qiuyan, Sun Liming, Zhuang Yuan, Zhan Wenwen, Wang Xiaojun, Han Xiguang
Jiangsu Key Laboratory of Green Synthetic Chemistry for Functional Materials, Department of Chemistry, School of Chemistry and Chemical Engineering, Jiangsu Normal University, Xuzhou, 221116, People's Republic of China.
Inorg Chem. 2020 Dec 7;59(23):17650-17658. doi: 10.1021/acs.inorgchem.0c02892. Epub 2020 Nov 18.
The low utilization efficiency in the visible region of the sunlight spectrum and the rapid recombination of photogenerated charge carriers are two crucial drawbacks that suppress the practical usage of metal oxide semiconductors as photocatalysts. In this article, we report a rational design of InO-InS heterojunctions encapsulated by N-doped carbon with a hollow dodecahedral structure (InO-InS/N-C HDS), which can effectively handle the two drawbacks of metal oxide semiconductors and behave active for organic transformation under the irradiation of visible light even with long wavelengths. As exemplified by the selective oxidative coupling reaction of amine to imine, the obtained InO-InS/N-C HDS as the photocatalyst has exhibited excellent activity and stability. Experimental and density functional theory studies have verified that the excellent performance of InO-InS/N-C HDS can be attributed to the synergistic effect of InO-InS heterojunctions, the coating of N-doped carbon, and the hollow porous structure with nanosheets as subunits.
太阳光光谱可见光区域的低利用效率以及光生载流子的快速复合是抑制金属氧化物半导体作为光催化剂实际应用的两个关键缺点。在本文中,我们报道了一种由具有中空十二面体结构的氮掺杂碳封装的InO-InS异质结(InO-InS/N-C HDS)的合理设计,它可以有效解决金属氧化物半导体的这两个缺点,并且即使在长波长可见光照射下对有机转化也具有活性。以胺选择性氧化偶联生成亚胺反应为例,所制备的InO-InS/N-C HDS作为光催化剂表现出优异的活性和稳定性。实验和密度泛函理论研究证实,InO-InS/N-C HDS的优异性能可归因于InO-InS异质结的协同效应、氮掺杂碳的包覆以及以纳米片为亚单元的中空多孔结构。