Rani Asha, Guo Shiqi, Krylyuk Sergiy, DiCamillo Kyle, Debnath Ratan, Davydov Albert V, Zaghloul Mona E
The George Washington University, Washington DC, USA.
Theiss Research, La Jolla, California, USA.
IEEE Trans Electron Devices. 2018;13. doi: https://doi.org/10.1109/NMDC.2018.8605918.
Single-crystalline MoSe and MoTe platelets were grown by Chemical Vapor Transport (CVT), followed by exfoliation, device fabrication, optical and electrical characterization. We observed that for the field-effect-transistor (FET) channel thickness in range of 5.5 nm to 8.5 nm, MoTe shows p-type, whereas MoSe with channel thickness range of 1.6 nm to 10.5 nm, shows n-type conductivity behavior. At room temperature, both MoSe and MoTe FETs have high ON/OFF current ratio and low contact resistance. Controlling charge carrier type and mobility in MoSe and MoTe layers can pave a way for utilizing these materials for heterojunction nanoelctronic devices with superior performance.
通过化学气相传输（CVT）生长出单晶MoSe和MoTe薄片，随后进行剥离、器件制造、光学和电学表征。我们观察到，对于场效应晶体管（FET）沟道厚度在5.5纳米至8.5纳米范围内，MoTe呈现p型，而沟道厚度范围为1.6纳米至10.5纳米的MoSe呈现n型导电行为。在室温下，MoSe和MoTe FET均具有高的开/关电流比和低接触电阻。控制MoSe和MoTe层中的电荷载流子类型和迁移率可为利用这些材料制造具有卓越性能的异质结纳米电子器件铺平道路。
