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通过改变沟道厚度来调节用于气体传感应用的碲化钼场效应晶体管的极性

Tuning the Polarity of MoTe FETs by Varying the Channel Thickness for Gas-Sensing Applications.

作者信息

Rani Asha, DiCamillo Kyle, Khan Md Ashfaque Hossain, Paranjape Makarand, Zaghloul Mona E

机构信息

School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USA.

Department of Physics, Georgetown University, Washington, DC 20057, USA.

出版信息

Sensors (Basel). 2019 Jun 4;19(11):2551. doi: 10.3390/s19112551.

DOI:10.3390/s19112551
PMID:31167486
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6603731/
Abstract

In this study, electrical characteristics of MoTe field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH) sensing, which confirms the p- and n-type behavior of MoTe devices.

摘要

在本研究中，研究了碲化钼场效应晶体管（FET）的电学特性与沟道厚度的函数关系。由剥离的碲化钼晶体制造的FET的导电类型随着碲化钼沟道厚度从10.6纳米增加到56.7纳米，从p型转变为双极性再到n型传导。碲化钼FET这种与薄片厚度相关的导电行为变化可归因于肖特基势垒高度的调制和相关的带隙对准。作为沟道厚度变化函数的极性变化也用于氨（NH）传感，这证实了碲化钼器件的p型和n型行为。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/551818718157/sensors-19-02551-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/c331b609895d/sensors-19-02551-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/e0d8986a9c8c/sensors-19-02551-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/9f482a7cf3c9/sensors-19-02551-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/8e0f5d141ccf/sensors-19-02551-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/17ef3933dbcf/sensors-19-02551-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/1aefe44be53a/sensors-19-02551-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/551818718157/sensors-19-02551-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/c331b609895d/sensors-19-02551-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/e0d8986a9c8c/sensors-19-02551-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/9f482a7cf3c9/sensors-19-02551-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/8e0f5d141ccf/sensors-19-02551-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/17ef3933dbcf/sensors-19-02551-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/1aefe44be53a/sensors-19-02551-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bebf/6603731/551818718157/sensors-19-02551-g007.jpg

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