Galeski S, Zhao X, Wawrzyńczak R, Meng T, Förster T, Lozano P M, Honnali S, Lamba N, Ehmcke T, Markou A, Li Q, Gu G, Zhu W, Wosnitza J, Felser C, Chen G F, Gooth J
Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187, Dresden, Germany.
Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, 100190, Beijing, China.
Nat Commun. 2020 Nov 23;11(1):5926. doi: 10.1038/s41467-020-19773-y.
Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three-dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.
在强磁场中被限制在最低朗道能级的相互作用电子可以形成各种关联态,其中一些会在霍尔效应中表现出来。尽管预计这种态会出现在三维半金属中,但尚未通过实验观察到相应的霍尔响应。在此,我们报告了在体半金属HfTe的量子极限中观察到的非常规霍尔响应,该响应与低磁场下单电子能带的三维量子霍尔效应相邻。最低朗道能级的霍尔电导率中额外的平台状特征伴随着纵向电阻率中的舒布尼科夫-德哈斯极小值,并且其大小与三维量子霍尔效应最后一个平台的高度之比为3/5。我们的发现与强电子-电子相互作用一致,在量子极限下稳定了三维材料中霍尔效应的一种非常规变体。