Wang Genwang, Guan Yanchao, Wang Yang, Ding Ye, Yang Lijun
Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China.
School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
Materials (Basel). 2023 Jan 12;16(2):738. doi: 10.3390/ma16020738.
Laser irradiation, as a kind of post-fabrication method for two-dimensional (2D) materials, is a promising way to tune the properties of materials and the performance of corresponding nano-devices. As the memristor has been regarded as an excellent candidate for in-memory devices in next-generation computing system, the application of laser irradiation in developing excellent memristor based on 2D materials should be explored deeply. Here, tellurene (Te) flakes are exposed to a 532 nm laser in the air atmosphere to investigate the evolutions of the surface morphology and atom structures under different irradiation parameters. Laser is capable of thinning the flakes, inducing amorphous structures, oxides and defects, and forming nanostructures by controlling the irradiation power and time. Furthermore, the laser-induced oxides and defects promote the migration of metal ions in Te, resulting in the formation of the conductive filaments, which provides the switching behavers of volatile memristor, opening a route to the development of next-generation nano-devices.
激光辐照作为二维（2D）材料的一种后制备方法，是调节材料性能和相应纳米器件性能的一种有前途的方法。由于忆阻器被认为是下一代计算系统中内存设备的优秀候选者，因此应深入探索激光辐照在基于二维材料开发优异忆阻器中的应用。在此，碲烯（Te）薄片在空气气氛中暴露于532 nm激光下，以研究不同辐照参数下表面形态和原子结构的演变。激光能够通过控制辐照功率和时间使薄片变薄，诱导非晶结构、氧化物和缺陷，并形成纳米结构。此外，激光诱导的氧化物和缺陷促进了碲中金属离子的迁移，导致导电细丝的形成，这提供了挥发性忆阻器的开关行为，为下一代纳米器件的开发开辟了一条途径。
