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具有改进光响应的中空MoS结构的模板化构建

Templated-Construction of Hollow MoS Architectures with Improved Photoresponses.

作者信息

Gao Chao, Han Yingdong, Zhang Kun, Wei Tian, Jiang Zhang, Wei Yang, Yin Lisha, Piccinelli Fabio, Yao Cheng, Xie Xiaoji, Bettinelli Marco, Huang Ling

机构信息

Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University 30 South Puzhu Road Nanjing 211816 China.

School of Inspection and Testing Certification Changzhou Vocational Institute of Engineering Changzhou 213164 China.

出版信息

Adv Sci (Weinh). 2020 Oct 15;7(22):2002444. doi: 10.1002/advs.202002444. eCollection 2020 Nov.

Abstract

Despite the outstanding optoelectronic properties of MoS and its analogues, synthesis of such materials with desired features including fewer layers, arbitrary hollow structures, and particularly specifically customized morphologies, via inorganic reactions has always been challenging. Herein, using predesigned lanthanide-doped upconversion luminescent materials (e.g., NaYF:Ln) as templates, arbitrary MoS hollow structures with precisely defined morphologies, widely variable dimensions, and very small shell thickness (≈2.5 nm) are readily constructed. Most importantly, integration of the near-infrared-responsive template significantly improves the photoresponse of up to 600 fold in device made of NaYF:Yb/Er@MoS compared with that of MoS nanosheets under 980 nm laser illumination. Multichannel optoelectronic device is further fabricated by simply changing luminescent ions in the template, e.g., NaYF:Er@MoS, operating at 1532 nm light excitation with a 276-fold photoresponse enhancement. The simple chemistry, easy operation, high reliability, variable morphologies, and wide universality represent the most important advantages of this novel strategy that has not been accessed before.

摘要

尽管MoS及其类似物具有出色的光电性能,但通过无机反应合成具有所需特性(包括较少层数、任意空心结构,特别是特定定制形态)的此类材料一直具有挑战性。在此,使用预先设计的镧系元素掺杂的上转换发光材料(例如NaYF:Ln)作为模板,可以轻松构建具有精确界定形态、广泛可变尺寸和非常小的壳层厚度(≈2.5 nm)的任意MoS空心结构。最重要的是,与980 nm激光照射下的MoS纳米片相比,近红外响应模板的整合显著提高了由NaYF:Yb/Er@MoS制成的器件中的光响应,高达600倍。通过简单地改变模板中的发光离子,例如NaYF:Er@MoS,进一步制造了多通道光电器件,在1532 nm光激发下运行,光响应增强了276倍。简单的化学方法、易于操作、高可靠性、可变形态和广泛的通用性代表了这种以前未曾实现的新策略的最重要优势。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/67db/7675057/07314b98944a/ADVS-7-2002444-g005.jpg

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