Ioudashkin Eduard, Malka Dror
Faculty of Engineering, Holon Institute of Technology (HIT), Holon 5810201, Israel.
Nanomaterials (Basel). 2020 Nov 25;10(12):2338. doi: 10.3390/nano10122338.
One of the most common techniques for increasing data bitrate using the telecommunication system is to use dense wavelength division multiplexing (DWDM). However, the implementation of DWDM with more channels requires additional waveguide coupler devices and greater energy consumption, which can limit the system performances. To solve these issues, we propose a new approach for designing the demultiplexer using angled multimode interference (AMMI) in gallium nitride (GaN)-silica (SiO) slot waveguide structures. SiO and GaN materials are selected for confining the infrared light inside the GaN areas under the transverse electric (TE) field mode. The results show that, after 3.56 mm light propagation, three infrared wavelengths in the C-band can be demultiplexed using a single AMMI coupler with a power loss of 1.31 to 2.44 dB, large bandwidth of 12 to 13.69 nm, very low power back reflection of 47.64 to 48.76 dB, and crosstalk of -12.67 to -15.62 dB. Thus, the proposed design has the potential for improving performances in the telecommunication system that works with DWDM technology.
利用电信系统提高数据比特率最常用的技术之一是使用密集波分复用（DWDM）。然而，实现更多信道的DWDM需要额外的波导耦合器设备以及更高的能耗，这可能会限制系统性能。为了解决这些问题，我们提出了一种在氮化镓（GaN）-二氧化硅（SiO）槽波导结构中使用倾斜多模干涉（AMMI）设计解复用器的新方法。选择SiO和GaN材料是为了在横向电场（TE）模式下将红外光限制在GaN区域内。结果表明，在光传播3.56毫米后，使用单个AMMI耦合器可以对C波段的三个红外波长进行解复用，功率损耗为1.31至2.44分贝，带宽为12至13.69纳米，极低的功率背反射为47.64至48.76分贝，串扰为-12.67至-15.62分贝。因此，所提出的设计具有改善采用DWDM技术的电信系统性能的潜力。
