Menahem Jonathan, Malka Dror
Faculty of Engineering, Holon Institute of Technology (HIT), Holon 5810201, Israel.
Materials (Basel). 2022 Jul 21;15(14):5067. doi: 10.3390/ma15145067.
Back reflection losses are a key problem that limits the performances of optical communication systems that work on wavelength division multiplexing (WDM) technology based on silicon (Si) Multimode Interference (MMI) waveguides. In order to overcome this problem, we propose a novel design for a 1 × 4 optical demultiplexer based on the MMI in silicon nitride (SiN) buried waveguide structure that operates at the C-band spectrum. The simulation results show that the proposed device can transmit four channels with a 10 nm spacing between them that work in the C-band with a low power loss range of 1.98-2.35 dB, large bandwidth of 7.68-8.08 nm, and good crosstalk of 20.9-23.6 dB. Thanks to the low refractive index of SiN, a very low back reflection of 40.57 dB is obtained without using a special angled MMI design, which is usually required, using Si MMI technology. Thus, this SiN demultiplexer MMI technology can be used in WDM technique for obtaining a high data bitrate alongside a low back reflection in optical communication systems.
背向反射损耗是一个关键问题，它限制了基于硅（Si）多模干涉（MMI）波导的波分复用（WDM）技术的光通信系统的性能。为了克服这个问题，我们提出了一种基于氮化硅（SiN）掩埋波导结构中MMI的新型1×4光解复用器设计，该结构在C波段光谱下工作。仿真结果表明，所提出的器件可以传输四个通道，它们之间的间距为10 nm，工作在C波段，功率损耗低至1.98 - 2.35 dB，带宽大至7.68 - 8.08 nm，串扰良好，为20.9 - 23.6 dB。由于SiN的低折射率，在不使用通常采用Si MMI技术时所需的特殊角度MMI设计的情况下，获得了40.57 dB的极低背向反射。因此，这种SiN解复用器MMI技术可用于WDM技术，以便在光通信系统中获得高数据比特率和低背向反射。
