Wu Gwomei, Sahoo Anup K
Institute of Electro-Optical Engineering, Chang Gung University, Chang Gung Memorial Hospital, Taoyuan 333, Taiwan.
Nanomaterials (Basel). 2020 Nov 27;10(12):2357. doi: 10.3390/nano10122357.
The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate. The electrical characteristics were evaluated with different sizes in channel width using fixed channel length. The distributions in terms of threshold voltage and current on-off level along the different channel width sizes have been discussed thoroughly. The minimum distribution of threshold voltage was observed at an oxygen flow rate of 1 sccm. The TFT electrical properties have been achieved, using an oxygen flow rate of 1 sccm with 500 µm channel width, the threshold voltage, ratio of on-current to off-current, sub-threshold swing voltage and field effect mobility to be 0.54 V, 10, 0.15 V/decade and 12.3 cm/V·s, respectively. On the other hand, a larger channel width of 2000 µm could further improve the ratio of on-current to off-current and sub-threshold swing voltage to 10 and 0.11 V/decade. The optimized combination of oxygen flow and channel width showed improved electrical characteristics for TFT applications.
研究了不同氧气流量对具有不同沟道宽度尺寸的基于铟镓锌氧化物（IGZO）的薄膜晶体管（TFT）的影响。IGZO纳米薄膜呈现非晶相，而带隙能量和薄层电阻随氧气流量的增加而增加。使用固定的沟道长度，以不同的沟道宽度尺寸评估电学特性。深入讨论了沿不同沟道宽度尺寸的阈值电压和电流开关水平的分布情况。在氧气流量为1 sccm时观察到阈值电压的最小分布。使用氧气流量为1 sccm且沟道宽度为500 µm时实现了TFT的电学性能，阈值电压、导通电流与截止电流之比、亚阈值摆幅电压和场效应迁移率分别为0.54 V、10、0.15 V/十倍频程和12.3 cm²/V·s。另一方面，更大的2000 µm沟道宽度可进一步将导通电流与截止电流之比和亚阈值摆幅电压提高到10和0.11 V/十倍频程。氧气流量和沟道宽度的优化组合显示出用于TFT应用的改善的电学特性。
Zotero 插件
