通过同时进行紫外线和热处理激活溅射处理的铟镓锌氧化物薄膜。

Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.

作者信息

Tak Young Jun, Ahn Byung Du, Park Sung Pyo, Kim Si Joon, Song Ae Ran, Chung Kwun-Bum, Kim Hyun Jae

机构信息

School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Republic of Korea.

Division of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, Korea.

出版信息

Sci Rep. 2016 Feb 23;6:21869. doi: 10.1038/srep21869.

DOI:10.1038/srep21869

PMID:26902863

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4763207/

Abstract

Indium-gallium-zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films using simultaneous ultraviolet and thermal (SUT) treatments to decrease the required temperature and enhance their electrical characteristics and stability. SUT treatment effectively decreased the amount of carbon residues and the number of defect sites related to oxygen vacancies and increased the number of metal oxide (M-O) bonds through the decomposition-rearrangement of M-O bonds and oxygen radicals. Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.23 to 15.81 cm(2)/Vs, 3.96 × 10(7) to 1.03 × 10(8), and 11.2 to 7.2 V, respectively.

摘要

通过在室温下溅射沉积的铟镓锌氧化物（IGZO）薄膜，仍需要进行激活处理以获得令人满意的半导体特性。热处理通常在300°C以上的温度下进行。在此，我们提出使用同步紫外和热（SUT）处理来激活溅射处理的IGZO薄膜，以降低所需温度并增强其电学特性和稳定性。SUT处理有效地减少了碳残留量以及与氧空位相关的缺陷位点数量，并通过M-O键和氧自由基的分解重排增加了金属氧化物（M-O）键的数量。使用SUT处理激活IGZO薄膜晶体管将处理温度降低至150°C，并改善了各种电学性能指标，包括迁移率、开/关比和阈值电压漂移（10000 s的正偏压应力），分别从3.23提高到15.81 cm²/Vs、从3.96×10⁷提高到1.03×10⁸，以及从11.2降低到7.2 V。