Ceponis Tomas, Lastovskii Stanislau, Makarenko Leonid, Pavlov Jevgenij, Pukas Kornelijus, Gaubas Eugenijus
Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio ave. 3, LT-10257 Vilnius, Lithuania.
Laboratory of Radiation Effects, Scientific-Practical Materials Research Centre of NAS of Belarus, P. Brovki Str.17, 220072 Minsk, Belarus.
Materials (Basel). 2020 Dec 12;13(24):5684. doi: 10.3390/ma13245684.
In this work, electrically active defects of pristine and 5.5 MeV electron irradiated -type silicon-germanium (SiGe)-based diodes were examined by combining regular capacitance deep-level transient spectroscopy (C-DLTS) and Laplace DLTS (L-DLTS) techniques. The -type SiGe alloys with slightly different Ge contents were examined. It was deduced from C-DLTS and L-DLTS spectra that the carbon/oxygen-associated complexes prevailed in the pristine SiGe alloys. Irradiation with 5.5 MeV electrons led to a considerable change in the DLT spectrum containing up to seven spectral peaks due to the introduction of radiation defects. These defects were identified using activation energy values reported in the literature. The double interstitial and oxygen complexes and the vacancy, di-vacancy and tri-vacancy ascribed traps were revealed in the irradiated samples. The interstitial carbon and the metastable as well as stable forms of carbon-oxygen (CO and CO) complexes were also identified for the electron-irradiated SiGe alloys. It was found that the unstable form of the carbon-oxygen complex became a stable complex in the irradiated and the subsequently annealed (at 125 °C) SiGe samples. The activation energy shifts in the radiation-induced deep traps to lower values were defined when increasing Ge content in the SiGe alloy.
在这项工作中，通过结合常规电容深能级瞬态谱（C-DLTS）和拉普拉斯DLTS（L-DLTS）技术，研究了原始的以及经5.5 MeV电子辐照的n型硅锗（SiGe）基二极管的电活性缺陷。研究了锗含量略有不同的n型SiGe合金。从C-DLTS和L-DLTS光谱推断，碳/氧相关复合物在原始SiGe合金中占主导地位。5.5 MeV电子辐照由于引入了辐射缺陷，导致DLT光谱发生了相当大的变化，该光谱包含多达七个光谱峰。利用文献中报道的激活能值对这些缺陷进行了识别。在辐照样品中发现了双间隙和氧复合物以及归因于空位、双空位和三空位的陷阱。对于电子辐照的SiGe合金，还识别出了间隙碳以及碳-氧（CO和CO）复合物的亚稳态和稳态形式。研究发现，碳-氧复合物的不稳定形式在辐照后的以及随后退火（在125°C）的SiGe样品中变成了稳定复合物。当SiGe合金中的锗含量增加时，辐射诱导的深陷阱中的激活能向更低值移动。
