Pavlov Jevgenij, Ceponis Tomas, Pukas Kornelijus, Makarenko Leonid, Gaubas Eugenijus
Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio Ave. 3, LT-10257 Vilnius, Lithuania.
Department of Applied Mathematics and Computer Science, Belarusian State University, Independence Ave. 4, 220030 Minsk, Belarus.
Materials (Basel). 2022 Mar 2;15(5):1861. doi: 10.3390/ma15051861.
Minority carrier traps play an important role in the performance and radiation hardness of the radiation detectors operating in a harsh environment of particle accelerators, such as the up-graded sensors of the high-luminosity hadron collider (HL-HC) at CERN. It is anticipated that the sensors of the upgraded strip tracker will be based on the -type silicon doped with boron. In this work, minority carrier traps in -type silicon (Si) and silicon-germanium (SiGe) alloys induced by 5.5 MeV electron irradiation were investigated by combining various modes of deep-level transient spectroscopy (DLTS) and pulsed technique of barrier evaluation using linearly increasing voltage (BELIV). These investigations were addressed to reveal the dominant radiation defects, the dopant activity transforms under local strain, as well as reactions with interstitial impurities and mechanisms of acceptor removal in -type silicon (Si) and silicon-germanium (SiGe) alloys, in order to ground technological ways for radiation hardening of the advanced particle detectors. The prevailing defects of interstitial boron-oxygen (BO) and the vacancy-oxygen (VO) complexes, as well as the vacancy clusters, were identified using the values of activation energy reported in the literature. The activation energy shift of the radiation-induced traps with content of Ge was clarified in all the examined types of SiGe (with = 0-0.05) materials.
少数载流子陷阱在运行于粒子加速器恶劣环境中的辐射探测器的性能和抗辐射能力方面起着重要作用，例如欧洲核子研究组织（CERN）高亮度强子对撞机（HL-HC）的升级传感器。预计升级后的条形追踪器传感器将基于掺硼的p型硅。在这项工作中，通过结合各种深能级瞬态谱（DLTS）模式和使用线性升压的势垒评估脉冲技术（BELIV），研究了5.5 MeV电子辐照在p型硅（Si）和硅锗（SiGe）合金中诱导产生的少数载流子陷阱。这些研究旨在揭示主要的辐射缺陷、局部应变下掺杂剂活性的变化，以及p型硅（Si）和硅锗（SiGe）合金中与间隙杂质的反应和受主去除机制，以便为先进粒子探测器的抗辐射硬化奠定技术基础。利用文献报道的激活能值，确定了间隙硼-氧（BO）和空位-氧（VO）复合体以及空位团簇等主要缺陷。在所有检测的SiGe（x = 0 - 0.05）材料类型中，阐明了辐射诱导陷阱的激活能随Ge含量的变化。
