Sarma Raktim, Nookala Nishant, Reilly Kevin James, Liu Sheng, de Ceglia Domenico, Carletti Luca, Goldflam Michael D, Campione Salvatore, Sapkota Keshab, Green Huck, Wang George T, Klem John, Sinclair Michael B, Belkin Mikhail A, Brener Igal
Sandia National Laboratories, Albuquerque, New Mexico 87123, United States.
Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque87123, New Mexico United States.
Nano Lett. 2021 Jan 13;21(1):367-374. doi: 10.1021/acs.nanolett.0c03744. Epub 2020 Dec 21.
Mie-resonant dielectric metasurfaces are excellent candidates for both fundamental studies related to light-matter interactions and for numerous applications ranging from holography to sensing to nonlinear optics. To date, however, most applications using Mie metasurfaces utilize only weak light-matter interaction. Here, we go beyond the weak coupling regime and demonstrate for the first time strong polaritonic coupling between Mie photonic modes and intersubband (ISB) transitions in semiconductor heterostructures. Furthermore, along with demonstrating ISB polaritons with Rabi splitting as large as 10%, we also demonstrate the ability to tailor the strength of strong coupling by engineering either the semiconductor heterostructure or the photonic mode of the resonators. Unlike previous plasmonic-based works, our new all-dielectric metasurface approach to generate ISB polaritons is free from ohmic losses and has high optical damage thresholds, thereby making it ideal for creating novel and compact mid-infrared light sources based on nonlinear optics.
米氏共振介电超表面对于与光与物质相互作用相关的基础研究以及从全息术到传感再到非线性光学等众多应用而言,都是极佳的候选对象。然而,迄今为止,大多数使用米氏超表面的应用仅利用了微弱的光与物质相互作用。在此,我们超越了弱耦合 regime,首次展示了米氏光子模式与半导体异质结构中的子带间(ISB)跃迁之间的强极化激元耦合。此外,在展示具有高达10%的拉比分裂的ISB极化激元的同时,我们还展示了通过设计半导体异质结构或谐振器的光子模式来调整强耦合强度的能力。与先前基于等离子体的工作不同,我们用于产生ISB极化激元的全新全介电超表面方法没有欧姆损耗且具有高光学损伤阈值,从而使其成为基于非线性光学创建新型紧凑型中红外光源的理想选择。