Filatova Elena O, Sakhonenkov Sergei S, Gaisin Aidar U, Konashuk Aleksei S, Chumakov Ratibor G, Pleshkov Roman S, Chkhalo Nikolay I
Institute of Physics, St-Petersburg State University, Ulyanovskaya Str. 1, Peterhof 198504, St. Petersburg, Russia.
National Research Center "Kurchatov Institute", Sq. Kurchatova, 1, Moscow, 123182, Russia.
Phys Chem Chem Phys. 2021 Jan 21;23(2):1363-1370. doi: 10.1039/d0cp05180b.
In the present study, the formation of intermediate compounds in the Mo/Si multilayer was realized by the introduction of barrier layers at the interfaces. Their impact on the interdiffusion of Mo and Si was analyzed via X-ray photoelectron spectroscopy. It was established that the insertion of a thin Be barrier layer led to the formation of beryllide MoBe12 at the interface Si-on-Mo, which prevented the formation of molybdenum disilicide and improved the interface. The insertion of the B4C barrier layer led to its complete decomposition with the formation of borides and carbides of molybdenum and silicon (MoBx, SiBx, MoxC and SiCx) at the Si-on-Mo interface. The formation of only MoBx and SiCx was detected at the Mo-on-Si interface. It was important that the insertion of a thin B4C barrier layer did not fully prevent the formation of MoSi2 at both (Si-on-Mo and Mo-on-Si) the interfaces. These facts allowed us to assume that the diffusion barrier function of the B4C interlayer could be caused by the stability of the formed compounds, rather than the stability of the B4C layer itself.
在本研究中，通过在界面处引入阻挡层实现了Mo/Si多层膜中中间化合物的形成。通过X射线光电子能谱分析了它们对Mo和Si相互扩散的影响。结果表明，插入薄的Be阻挡层导致在Si-on-Mo界面处形成铍化物MoBe12，这阻止了二硅化钼的形成并改善了界面。插入B4C阻挡层导致其在Si-on-Mo界面处完全分解，形成钼和硅的硼化物和碳化物（MoBx、SiBx、MoxC和SiCx）。在Mo-on-Si界面处仅检测到MoBx和SiCx的形成。重要的是，插入薄的B4C阻挡层并不能完全阻止在两个（Si-on-Mo和Mo-on-Si）界面处形成MoSi2。这些事实使我们能够假设，B4C中间层的扩散阻挡功能可能是由所形成化合物的稳定性引起的，而不是B4C层本身的稳定性。
