Ondry Justin C, Philbin John P, Lostica Michael, Rabani Eran, Alivisatos A Paul
Department of Chemistry, University of California, Berkeley, California 94720, United States.
Kavli Energy NanoScience Institute, Berkeley, California 94720, United States.
ACS Nano. 2021 Feb 23;15(2):2251-2262. doi: 10.1021/acsnano.0c07202. Epub 2020 Dec 30.
By combining colloidal nanocrystal synthesis, self-assembly, and solution phase epitaxial growth techniques, we developed a general method for preparing single dot thick atomically attached quantum dot (QD) superlattices with high-quality translational and crystallographic orientational order along with state-of-the-art uniformity in the attachment thickness. The procedure begins with colloidal synthesis of hexagonal prism shaped core/shell QDs (.., CdSe/CdS), followed by liquid subphase self-assembly and immobilization of superlattices on a substrate. Solution phase epitaxial growth of additional semiconductor material fills in the voids between the particles, resulting in a QD-in-matrix structure. The photoluminescence emission spectra of the QD-in-matrix structure retains characteristic 0D electronic confinement. Importantly, annealing of the resulting structures removes inhomogeneities in the QD-QD inorganic bridges, which our atomistic electronic structure calculations demonstrate would otherwise lead to Anderson-type localization. The piecewise nature of this procedure allows one to independently tune the size and material of the QD core, shell, QD-QD distance, and the matrix material. These four choices can be tuned to control many properties (degree of quantum confinement, quantum coupling, band alignments, ) depending on the specific applications. Finally, cation exchange reactions can be performed on the final QD-in-matrix, as demonstrated herein with a CdSe/CdS to HgSe/HgS conversion.
通过结合胶体纳米晶体合成、自组装和溶液相外延生长技术,我们开发了一种通用方法,用于制备单量子点厚的原子附着量子点(QD)超晶格,该超晶格具有高质量的平移和晶体学取向有序性,以及附着厚度方面的最新均匀性。该过程始于胶体合成六棱柱形核/壳量子点(如CdSe/CdS),随后进行液体亚相自组装并将超晶格固定在基板上。额外半导体材料的溶液相外延生长填充了颗粒之间的空隙,从而形成了量子点镶嵌结构。量子点镶嵌结构的光致发光发射光谱保留了特征性的零维电子限制。重要的是,对所得结构进行退火可消除量子点-量子点无机桥中的不均匀性,我们的原子电子结构计算表明,否则会导致安德森型局域化。此过程的分段性质使人们能够独立调节量子点核心、壳层的尺寸和材料、量子点-量子点间距以及基质材料。根据具体应用,可以调节这四个选择来控制许多特性(量子限制程度、量子耦合、能带排列等)。最后,可以对最终的量子点镶嵌结构进行阳离子交换反应,本文展示了从CdSe/CdS到HgSe/HgS的转换。