Wang Lu-Lu, Huang Wen-Hua, Fang Wen-Rao, Fu Chao, He Tian-Wei, Li Jia-Wei
Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024, China.
Department of Engineering Physics, Tsinghua University, Beijing 100084, China.
Rev Sci Instrum. 2020 Dec 1;91(12):124701. doi: 10.1063/5.0021571.
Measurement for modeling of the high-power transistors is difficult due to its high-power and low-impedance characteristics. In this paper, novel methods and devices were designed and applied to achieve precise measurements of the high-power transistors. Fixtures capable of withstanding high voltage and current were designed to replace traditional radio frequency (RF) probes for higher power capacity. To reduce the impact of capacitive and inductive components of traditional bias tees on the rising/falling edge, two wideband 90° hybrid couplers that were connected back-to-back were designed for pulsed measurements. The measurement system of stable S-parameters with the Vector Network Analyzer (VNA) was reported, which could protect the devices and laboratory equipment from damage of self-oscillation. Application of several innovative approaches enabled accurate I-V characteristic and S-parameters measurements of high-power transistors in DC or pulsed mode. Experimental results of a 30 W gallium nitride high-electron-mobility transistor verified the validity.
由于高功率晶体管具有高功率和低阻抗特性，对其进行建模测量具有一定难度。本文设计并应用了新颖的方法和器件，以实现对高功率晶体管的精确测量。设计了能够承受高电压和大电流的夹具，用于替代传统的射频（RF）探头，从而具备更高的功率容量。为了减少传统偏置三通的电容和电感元件对上升/下降沿的影响，设计了两个背靠背连接的宽带90°混合耦合器用于脉冲测量。报道了一种使用矢量网络分析仪（VNA）的稳定S参数测量系统，该系统可保护器件和实验室设备免受自激振荡的损害。多种创新方法的应用使得在直流或脉冲模式下能够准确测量高功率晶体管的I-V特性和S参数。一个30W氮化镓高电子迁移率晶体管的实验结果验证了该方法的有效性。
