Qin Fei, Liu Boqing, Zhu Linwei, Lei Jian, Fang Wei, Hu Dejiao, Zhu Yi, Ma Wendi, Wang Bowen, Shi Tan, Cao Yaoyu, Guan Bai-Ou, Qiu Cheng-Wei, Lu Yuerui, Li Xiangping
Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 510632, China.
Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia.
Nat Commun. 2021 Jan 4;12(1):32. doi: 10.1038/s41467-020-20278-x.
The emerging monolayer transition metal dichalcogenides have provided an unprecedented material platform for miniaturized opto-electronic devices with integrated functionalities. Although excitonic light-matter interactions associated with their direct bandgaps have received tremendous research efforts, wavefront engineering is less appreciated due to the suppressed phase accumulation effects resulting from the vanishingly small thicknesses. By introducing loss-assisted singular phase behaviour near the critical coupling point, we demonstrate that integration of monolayer MoS on a planar ZnO/Si substrate, approaching the physical thickness limit of the material, enables a π phase jump. Moreover, highly dispersive extinctions of MoS further empowers broadband phase regulation and enables binary phase-modulated supercritical lenses manifesting constant sub-diffraction-limited focal spots of 0.7 Airy units (AU) from the blue to yellow wavelength range. Our demonstrations downscaling optical elements to atomic thicknesses open new routes for ultra-compact opto-electronic systems harnessing two-dimensional semiconductor platforms with integrated functionalities.
新兴的单层过渡金属二硫属化物为具有集成功能的小型化光电器件提供了前所未有的材料平台。尽管与其直接带隙相关的激子光与物质相互作用已得到大量研究,但由于厚度极小导致相位积累效应受到抑制,波前工程较少受到关注。通过在临界耦合点附近引入损耗辅助奇异相位行为,我们证明在接近材料物理厚度极限的平面ZnO/Si衬底上集成单层MoS能够实现π相位跃变。此外,MoS的高度色散消光进一步实现了宽带相位调节,并使二元相位调制超临界透镜能够在从蓝光到黄光的波长范围内呈现0.7艾里单位(AU)的恒定亚衍射极限焦点。我们将光学元件缩小到原子厚度的演示为利用具有集成功能的二维半导体平台的超紧凑光电子系统开辟了新途径。