Chen Ying-Chen, Lin Chao-Cheng, Chang Yao-Feng
School of Informatics, Computing and Cyber Systems, Northern Arizona University, Flagstaff, AZ 86011, USA.
Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30078, Taiwan.
Micromachines (Basel). 2021 Jan 3;12(1):50. doi: 10.3390/mi12010050.
The sneak path current (SPC) is the inevitable issue in crossbar memory array while implementing high-density storage configuration. The crosstalks are attracting much attention, and the read accuracy in the crossbar architecture is deteriorated by the SPC. In this work, the sneak path current problem is observed and investigated by the electrical experimental measurements in the crossbar array structure with the half-read scheme. The read margin of the selected cell is improved by the bilayer stacked structure, and the sneak path current is reduced ~20% in the bilayer structure. The voltage-read stress-induced read margin degradation has also been investigated, and less voltage stress degradation is showed in bilayer structure due to the intrinsic nonlinearity. The oxide-based bilayer stacked resistive random access memory (RRAM) is presented to offer immunity toward sneak path currents in high-density memory integrations when implementing the future high-density storage and in-memory computing applications.
在实现高密度存储配置时，潜通路电流（SPC）是交叉开关存储器阵列中不可避免的问题。串扰备受关注，并且交叉开关架构中的读取精度会因SPC而降低。在这项工作中，通过采用半读取方案的交叉开关阵列结构中的电学实验测量，对潜通路电流问题进行了观察和研究。双层堆叠结构提高了所选单元的读取裕度，并且在双层结构中潜通路电流降低了约20%。还研究了电压读取应力引起的读取裕度退化，由于其固有非线性，双层结构中显示出较小的电压应力退化。提出了基于氧化物的双层堆叠电阻式随机存取存储器（RRAM），以便在实现未来的高密度存储和内存计算应用时，在高密度存储器集成中对潜通路电流具有免疫能力。
