Jang Gabriel, Park Mihyun, Hyeon Da Seul, Kim WooJong, Yang JungYup, Hong JinPyo
Novel Functional Materials and Device Laboratory, Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 04763, Republic of Korea.
Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Sci Rep. 2020 Oct 1;10(1):16286. doi: 10.1038/s41598-020-73407-3.
Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 10, switching speed of less than 100 ns, and switching endurance of more than 10. In addition, thermally robust ZnTe selectors (up to 400 ℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 ℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole-Frankel conduction model.
涉及双端可扩展交叉阵列集成的三维可堆叠存储框架有望满足高密度存储、快速切换速度和超低功耗运行的需求。然而，双端交叉阵列会引入意外的潜行路径，这不可避免地需要双向非线性选择器。在本研究中，基于碲化锌硫族化物材料的选择器的先进阈值开关（TS）特性提供了双向阈值开关行为、10的非线性、小于100纳秒的开关速度以及超过10的开关耐久性。此外，通过使用氮气退火处理，可以获得热稳定性高的碲化锌选择器（高达400℃）。该过程可以防止在热退火过程中（即使在250℃的低温下）在普通硫族化物材料中观察到的可能的相分离现象。通过普尔-弗兰克el传导模型进行的各种结构和电学分析描述了电学和热学上先进的TS特性的可能特征。
