Ndikumana Joel, Chintalapalli Jyothi, Kwon Jin-Hyuk, Bae Jin-Hyuk, Park Jaehoon
Department of Electronic Engineering, Hallym University, Chuncheon 24252, Korea.
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1754-1760. doi: 10.1166/jnn.2021.18904.
We investigate the effects of environmental conditions on the electrical stability of spin-coated 5,11-bis(triethylsilylethynyl)anthradithiophene (TES-ADT) thin-film transistors (TFTs) in which crosslinked poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) was utilized as a gate insulator layer. Atomic force microscopy observations show molecular terraces with domain boundaries in the spin-coated TEST-ADT semiconductor film. The TFT performance was observed to be superior in the ambient air condition. Under negative gate-bias stress, the TES-ADT TFTs showed a positive threshold voltage shift in ambient air and a negative threshold voltage shift under vacuum. These results are explained through a chemical reaction between water molecules in air and unsubstituted hydroxyl groups in the cross-linked PVP-co-PMMA as well as a charge-trapping phenomenon at the domain boundaries in the spin-coated TES-ADT semiconductor.
我们研究了环境条件对旋涂5,11-双（三乙基硅乙炔基）蒽二噻吩（TES-ADT）薄膜晶体管（TFT）电稳定性的影响，其中交联的聚（4-乙烯基苯酚-共-甲基丙烯酸甲酯）（PVP-共-PMMA）被用作栅极绝缘层。原子力显微镜观察显示，旋涂的TEST-ADT半导体薄膜中存在具有畴边界的分子平台。在环境空气条件下观察到TFT性能更优。在负栅极偏压应力下，TES-ADT TFT在环境空气中表现出正阈值电压偏移，而在真空中表现出负阈值电压偏移。这些结果可通过空气中的水分子与交联的PVP-共-PMMA中未取代的羟基之间的化学反应以及旋涂的TES-ADT半导体中畴边界处的电荷俘获现象来解释。
