Tareen Ayesha Khan, Khan Karim, Aslam Muhammad, Zhang Han, Liu Xinke
College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
Nanoscale. 2021 Jan 21;13(2):510-552. doi: 10.1039/d0nr07444f.
The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.
石墨烯（G）的发现引发了人们对其他新型二维材料（2DMs）研究的广泛关注，由于研究人员正在将大部分有前景的周期表元素转化为二维材料，这一领域被视为现代的“炼金术”。在二维材料家族中，新发明的第IIIA - VIA族单元素、原子级薄的二维材料，称为“Xenes”（其中，X = 第IIIA - VIA族元素，“ene”是纳米片（NSs）的拉丁词），是制造未来高速、低成本和高效率纳米器件的一个非常活跃的研究领域。目前，典型Xenes的任何新型二维材料结构都可能应用于电子技术。分析它们可能的高灵敏度合成和表征为在理想情况下从原子精度理论上研究提出的二维Xenes提供了机会，从而为实验支持提供理论预测。对于第VIA族元素（碲烯（2D - Te）和硒烯（2D - Se）），已经研究了几种理论预测和实验合成的二维Xene材料，它们类似于拓扑绝缘体（TIs），因此有可能使其成为适用于未来纳米器件的材料。尽管这些材料的研究和器件应用仍处于起步阶段，但理论研究和一些基于实验的研究已经证明它们与传统的（即层状块状衍生的）二维材料互补。本综述重点关注新型第VIA族Xenes（2D - Te和2D - Se）的合成，并总结了目前在理解其基本性质方面的进展以及在显著的器件应用方面的当前进展。最后，总结并强调了第VIA族Xenes的未来研究前景、进一步的先进应用及相关缺点。
