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通过传统溅射在蓝宝石上生长的MnSi薄膜中的斯格明子相

Skyrmion Phase in MnSi Thin Films Grown on Sapphire by a Conventional Sputtering.

作者信息

Choi Won-Young, Bang Hyun-Woo, Chun Seung-Hyun, Lee Sunghun, Jung Myung-Hwa

机构信息

Department of Physics, Sogang University, Seoul, 04107, Korea.

Department of Physics, Sejong University, Seoul, 05006, Korea.

出版信息

Nanoscale Res Lett. 2021 Jan 6;16(1):7. doi: 10.1186/s11671-020-03462-2.

Abstract

Topologically protected chiral skyrmions are an intriguing spin texture that has attracted much attention because of fundamental research and future spintronic applications. MnSi with a non-centrosymmetric structure is a well-known material hosting a skyrmion phase. To date, the preparation of MnSi crystals has been investigated by using special instruments with an ultrahigh vacuum chamber. Here, we introduce a facile way to grow MnSi films on a sapphire substrate using a relatively low vacuum environment of conventional magnetron sputtering. Although the as-grown MnSi films have a polycrystalline nature, a stable skyrmion phase in a broad range of temperatures and magnetic fields is observed via magnetotransport properties including phenomenological scaling analysis of the Hall resistivity contribution. Our findings provide not only a general way to prepare the materials possessing skyrmion phases but also insight into further research to stimulate more degrees of freedom in our inquisitiveness.

摘要

拓扑保护的手性斯格明子是一种引人入胜的自旋纹理,因其基础研究和未来的自旋电子学应用而备受关注。具有非中心对称结构的MnSi是一种众所周知的包含斯格明子相的材料。迄今为止,已经通过使用配备超高真空腔的特殊仪器对MnSi晶体的制备进行了研究。在此,我们介绍一种利用传统磁控溅射的相对低真空环境在蓝宝石衬底上生长MnSi薄膜的简便方法。尽管生长的MnSi薄膜具有多晶性质,但通过包括霍尔电阻率贡献的唯象标度分析在内的磁输运性质,在很宽的温度和磁场范围内观察到了稳定的斯格明子相。我们的发现不仅提供了一种制备具有斯格明子相材料的通用方法,还为进一步的研究提供了见解,以激发我们探索更多自由度的好奇心。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/328e/7788108/0f9d86e73f48/11671_2020_3462_Fig1_HTML.jpg

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