Indrišiūnas Simonas, Svirplys Evaldas, Jorudas Justinas, Kašalynas Irmantas
Laser Microfabrication Laboratory, Center for Physical Sciences and Technology (FTMC), Savanoriu Ave. 231, LT-02300 Vilnius, Lithuania.
Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio 3, LT-10257 Vilnius, Lithuania.
Micromachines (Basel). 2021 Apr 6;12(4):407. doi: 10.3390/mi12040407.
Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the ablated trench is a useful method for partitioning of such substrates after the development of the electronics on a backside. However, in some cases damage to the component performance occurs. Therefore, the influence of various parameters of the laser processing, such as fluence in the spot size, substrate thickness, orientation, and the polarization of focused laser beam, to the formation of damage zones at both sides of the transparent substrate with thin coatings when ablating the trenches from one side was investigated. The vicinity effect of the ablated trenches on the performance of the electronics was also evaluated, confirming the laser micromachining suitability for the dicing of transparent wafers with high accuracy and flexibility.
蓝宝石和碳化硅衬底用于生长Ⅲ - N族异质结构，以获得用于高功率和高频应用的电子器件。在透明晶圆正面进行深通道的激光微加工，然后沿烧蚀沟槽进行机械切割，这是在背面进行电子器件开发后对这种衬底进行分割的一种有用方法。然而，在某些情况下会出现组件性能受损的情况。因此，研究了激光加工的各种参数，如光斑尺寸的能量密度、衬底厚度、取向以及聚焦激光束的偏振，对从一侧烧蚀沟槽时带有薄涂层的透明衬底两侧损伤区形成的影响。还评估了烧蚀沟槽对电子器件性能的邻近效应，证实了激光微加工对于高精度和灵活地切割透明晶圆的适用性。
