Cheng Hsien-Chie, Liu Yan-Cheng, Lin Hsin-Han, Chiou Shian-Chiau, Tzeng Chih-Ming, Chang Tao-Chih
Department of Aerospace and Systems Engineering, Feng Chia University, Taichung 407, Taiwan.
Ph.D. Program of Mechanical and Aeronautical Engineering, Feng Chia University, Taichung 407, Taiwan.
Micromachines (Basel). 2023 Jun 30;14(7):1356. doi: 10.3390/mi14071356.
This study aims to develop a 30 kHz/12 kW silicon carbide (SiC)/Si integrated hybrid power module (iHPM) for variable frequency drive applications, particularly industrial servo motor control, and, additionally, to theoretically and experimentally assess its dynamic characteristics and efficiency during operation. This iHPM integrates a brake circuit, a three-phase Si rectifier, and a three-phase SiC inverter within a single package to achieve a minimal current path. A space-vector pulse width modulation (SVPWM) scheme is used to control the inverter power switches. In order to reduce parasitic inductance and power loss, an inductance cancellation design is implemented in the Si rectifier and SiC inverter. The switching transients and their parasitic effects during a three-phase operation are assessed through an electromagnetic-circuit co-simulation model, by which the power loss and efficiency of the iHPM are estimated. The modeled parasitic inductance of the inverter is validated through inductance measurement, and the effectiveness of the simulated results in terms of switching transients and efficiency is verified using the experimental results of the double pulse test and open-loop inverter operation, respectively. In addition, the power loss and efficiency of the SiC MOSFET inverter are experimentally compared against those of a commercial Si IGBT inverter.
本研究旨在开发一款用于变频驱动应用（特别是工业伺服电机控制）的30 kHz/12 kW碳化硅（SiC）/硅集成混合功率模块（iHPM），此外，还将在理论和实验上评估其运行期间的动态特性和效率。该iHPM在单个封装内集成了制动电路、三相硅整流器和三相SiC逆变器，以实现最小电流路径。采用空间矢量脉宽调制（SVPWM）方案来控制逆变器功率开关。为了降低寄生电感和功率损耗，在硅整流器和SiC逆变器中实施了电感消除设计。通过电磁电路联合仿真模型评估三相运行期间的开关瞬态及其寄生效应，据此估算iHPM的功率损耗和效率。通过电感测量验证了逆变器建模的寄生电感，并分别使用双脉冲测试和开环逆变器运行的实验结果验证了仿真结果在开关瞬态和效率方面的有效性。此外，还通过实验将SiC MOSFET逆变器的功率损耗和效率与商用硅IGBT逆变器进行了比较。
