Huo Qin, Shao Yongliang, Wu Yongzhong, Zhang Baoguo, Hu Haixiao, Hao Xiaopeng
State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P.R. China.
Sci Rep. 2018 Feb 16;8(1):3166. doi: 10.1038/s41598-018-21607-3.
In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/AlO (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/AlO (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.
在本研究中，通过两步蚀刻工艺从MOCVD-GaN/AlO（MGA）获得了一种新型纳米多孔模板，先进行电化学蚀刻，随后依次进行化学湿法蚀刻。利用两次蚀刻的MOCVD-GaN/AlO（TEMGA）模板通过氢化物气相外延（HVPE）法生长GaN晶体。在蚀刻的纳米孔形成的空隙的辅助下，GaN晶体从TEMGA模板中自发分离。采用多种技术对从TEMGA模板获得的独立GaN晶体的质量进行了表征。结果表明，与在MGA上生长的GaN晶体相比，所获得的GaN晶体质量有明显提高。这种简便的技术可用于生长高质量的独立GaN晶体。
