使用会聚束电子衍射的对称性破缺指数评估聚焦离子束制备的透射电子显微镜样品质量。

Evaluation of TEM specimen quality prepared by focused ion beam using symmetry breaking index of convergent-beam electron diffraction.

作者信息

Morikawa Daisuke, Ageishi Masaki, Sato Kaori, Tsuda Kenji, Terauchi Masami

机构信息

Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.

Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.

出版信息

Microscopy (Oxf). 2021 Aug 9;70(4):394-397. doi: 10.1093/jmicro/dfab002.

DOI:10.1093/jmicro/dfab002

PMID:33449081

Abstract

Degradation of the crystalline quality of transmission electron microscopy specimens in silicon prepared with different conditions has been examined using convergent-beam electron diffraction (CBED). The specimens are prepared using focused ion beam (FIB) with different accelerating voltages, Ar-ion milling and crushing method. Symmetry breaking of CBED patterns was quantitatively evaluated by symmetry breaking index S, which has been previously reported. The degradation and inhomogeneity of the FIB specimen were suppressed by decreasing the accelerating voltages of the FIB fabrication in the final process.

摘要

利用会聚束电子衍射（CBED）研究了在不同条件下制备的硅透射电子显微镜样品的晶体质量退化情况。样品采用聚焦离子束（FIB），通过不同加速电压、氩离子研磨和破碎法制备。CBED图案的对称性破坏通过先前报道的对称性破坏指数S进行定量评估。在最终工艺中降低FIB制造的加速电压可抑制FIB样品的退化和不均匀性。