Tong Chuyao, Garreis Rebekka, Knothe Angelika, Eich Marius, Sacchi Agnese, Watanabe Kenji, Taniguchi Takashi, Fal'ko Vladimir, Ihn Thomas, Ensslin Klaus, Kurzmann Annika
Solid State Physics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.
National Graphene Institute, University of Manchester, Manchester M13 9PL, United Kingdom.
Nano Lett. 2021 Jan 27;21(2):1068-1073. doi: 10.1021/acs.nanolett.0c04343. Epub 2021 Jan 15.
Quantum states in graphene are 2-fold degenerate in spins, and 2-fold in valleys. Both degrees of freedom can be utilized for qubit preparations. In our bilayer graphene quantum dots, we demonstrate that the valley g-factor , defined analogously to the spin g-factor for valley splitting in a perpendicular magnetic field, is tunable by over a factor of 4 from 20 to 90, by gate voltage adjustments only. Larger results from larger electronic dot sizes, determined from the charging energy. On our versatile device, bipolar operation, charging our quantum dot with charge carriers of the same or the opposite polarity as the leads, can be performed. Dots of both polarities are tunable to the first charge carrier, such that the transition from an electron to a hole dot by the action of the plunger gate can be observed. Addition of gates easily extends the system to host tunable double dots.
石墨烯中的量子态在自旋方面是双重简并的,在能谷方面也是双重简并的。这两个自由度都可用于量子比特的制备。在我们的双层石墨烯量子点中,我们证明了能谷g因子(其定义类似于自旋g因子,用于在垂直磁场中产生能谷分裂)仅通过栅极电压调整就可以在20到90的范围内调节超过4倍。更大的g因子源于更大的电子点尺寸,这是由充电能量决定的。在我们的通用器件上,可以进行双极操作,即使用与引线具有相同或相反极性的电荷载流子对我们的量子点进行充电。两种极性的量子点都可以调节到第一个电荷载流子,从而可以观察到通过柱塞栅极的作用使量子点从电子点转变为空穴点。添加栅极可以轻松地将系统扩展为容纳可调节的双量子点。