García-Fernández Javier, Torres-Pardo Almudena, Ramírez-Castellanos Julio, Rossell Marta D, González-Calbet José M
Inorganic Chemistry Department, Chemical Sciences Faculty, Universidad Complutense de Madrid, 28040 Madrid, Spain.
Electron Microscopy Center, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.
Nanomaterials (Basel). 2021 Jan 14;11(1):198. doi: 10.3390/nano11010198.
The optimization of novel transparent conductive oxides (TCOs) implies a better understanding of the role that the dopant plays on the optoelectronic properties of these materials. In this work, we perform a systematic study of the homologous series ZnInO (IZO) by characterizing the specific location of indium in the structure that leads to a nanodomain framework to release structural strain. Through a systematic study of different terms of the series, we have been able to observe the influence of the value in the nano-structural features of this homologous series. The stabilization and visualization of the structural modulation as a function of is discussed, even in the lowest term of the series ( = 3). The strain fields and atomic displacements in the wurtzite structure as a consequence of the introduction of In are evaluated.
新型透明导电氧化物（TCOs）的优化意味着要更好地理解掺杂剂对这些材料光电性能的作用。在这项工作中，我们通过表征铟在结构中的特定位置来对同系物系列ZnInO（IZO）进行系统研究，该位置会导致纳米域框架以释放结构应变。通过对该系列不同项的系统研究，我们得以观察到该值对这个同系物系列纳米结构特征的影响。本文讨论了结构调制作为函数的稳定性和可视化，即使在该系列的最低项（= 3）中也是如此。评估了由于引入铟而导致的纤锌矿结构中的应变场和原子位移。
