Gutierrez-Urrutia Ivan
Research Center for Strategic Materials, National Institute for Materials Science, Tsukuba, Ibaraki305-0047, Japan.
Microsc Microanal. 2021 Apr;27(2):318-325. doi: 10.1017/S1431927620024952.
The characteristics of electron channeling contrast (ECC) of stacking faults in a [101] single-crystal 316L fcc (face-centered cubic) stainless steel have been evaluated. Channeling contrast was analyzed from a series of ECC images taken as a function of sample tilt at ~0.1° increments across the (111) Kikuchi band. The most relevant imaging parameters of the fault contrast, namely the number of fringes, fringe intensity, and fringe spacing, were analyzed under different channeling conditions. The present work shows that the channeling contrast of stacking faults exhibits strong dependence on the sign and magnitude of the deviation parameter, w (w = s ξg, where s is the excitation vector and ξg is the extinction distance). This effect has strong influence on channeling conditions for fault imaging and g.R analysis for determining the nature of a stacking fault. g.R analysis was evaluated by the method developed by Gevers et al. (1963) on g-reversion experiments of ECC images of a stacking fault configuration. The interplay between the stacking fault nature and ε-martensite is analyzed.
已对[101]单晶316L面心立方（fcc）不锈钢中堆垛层错的电子通道衬度（ECC）特征进行了评估。通过一系列ECC图像分析通道衬度，这些图像是在跨越（111）菊池带以约0.1°增量的样品倾斜度函数下拍摄的。在不同的通道条件下，分析了位错衬度最相关的成像参数，即位错条纹数量、条纹强度和条纹间距。目前的工作表明，堆垛层错的通道衬度强烈依赖于偏差参数w的符号和大小（w = s ξg，其中s是激发矢量，ξg是消光距离）。这种效应对错位成像的通道条件以及用于确定堆垛层错性质的g.R分析有很大影响。g.R分析是通过Gevers等人（1963年）开发的方法，对堆垛层错构型的ECC图像进行g反转实验来评估的。分析了堆垛层错性质与ε-马氏体之间的相互作用。
